STK4N25 Specs and Replacement
Type Designator: STK4N25
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
Package: SOT82
STK4N25 substitution
- MOSFET ⓘ Cross-Reference Search
STK4N25 datasheet
Detailed specifications: STK23N05L , STK23N06L , STK2N50 , STK2N80 , STK2NA60 , STK3055E , STK3N50 , STK3NA50 , 8205A , STK4N30 , STK4N30L , STK4N40 , STK6N20 , STK9N10 , STP10NA40 , STP10NA40FI , STP13N10L .
History: STK4N30
Keywords - STK4N25 MOSFET specs
STK4N25 cross reference
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STK4N25 substitution
STK4N25 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: STK4N30
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