LNC20N65 Datasheet and Replacement
Type Designator: LNC20N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 43.4 nS
Cossⓘ - Output Capacitance: 266 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO-220
LNC20N65 substitution
LNC20N65 Datasheet (PDF)
lnc20n65 lnd20n65 lnb20n65.pdf

LNC20N65/LND20N65/LNB20N65Lonten N-channel 650V, 20A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 650VDSSadvanced planer VDMOS technology. The I 20ADresulting device has low conduction resistance, R 0.5DS(on),maxsuperior switching performance and high avalanche Q 58.3 nCg,typenergy.Features Low RDS(on) Low gate charge (t
lnc20n60 lnd20n60 lnb20n60.pdf

LNC20N60/ LND20N60/LNB20N60Lonten N-channel 600V, 20A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 600VDSSadvanced planer VDMOS technology. The I 20ADresulting device has low conduction resistance, R 0.45DS(on),maxsuperior switching performance and high avalanche Q 63.7 nCg,typenergy.Features Low RDS(on) Low gate charge
Datasheet: LNC10R180 , LNC12N60 , LNC12N65 , LNC13N50 , LNC16N60 , LNC16N65 , LNC18N50 , LNC20N60 , RFP50N06 , LNC2N60 , LNC2N65 , LNC4N60 , LNC4N65 , LNC4N80 , LNC5N50 , LNC5N65B , LNC7N60 .
Keywords - LNC20N65 MOSFET datasheet
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