STK4N30 PDF and Equivalents Search

 

STK4N30 Specs and Replacement

Type Designator: STK4N30

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm

Package: SOT82

STK4N30 substitution

- MOSFET ⓘ Cross-Reference Search

 

STK4N30 datasheet

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STK4N30

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STK4N30

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STK4N30

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Detailed specifications: STK23N06L , STK2N50 , STK2N80 , STK2NA60 , STK3055E , STK3N50 , STK3NA50 , STK4N25 , 7N65 , STK4N30L , STK4N40 , STK6N20 , STK9N10 , STP10NA40 , STP10NA40FI , STP13N10L , STP13N10LFI .

Keywords - STK4N30 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 


 
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