LNC5N50 Datasheet and Replacement
Type Designator: LNC5N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 33.1 nS
Cossⓘ - Output Capacitance: 80.3 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
Package: TO-220
LNC5N50 substitution
LNC5N50 Datasheet (PDF)
lnc5n50 lnd5n50 lng5n50 lnh5n50.pdf

LNC5N50\LND5N50\LNG5N50\LNH5N50Lonten N-channel 500V, 5A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 500VDSSadvanced planar VDMOS technology. The I 5ADresulting device has low conduction resistance, R 1.6DS(on),maxsuperior switching performance and high avalanche Q 12.8 nCg,typenergy.Features Low RDS(on) Low gate charge
lnc5n65b lnd5n65b lng5n65b lnh5n65b.pdf

LNC5N65B\LND5N65B\LNG5N65B\LNH5N65BLonten N-channel 650V, 5A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 650VDSSadvanced planar VDMOS technology. The I 5ADresulting device has low conduction resistance, R 2.1DS(on),maxsuperior switching performance and high avalanche Q 14.5 nCg,typenergy.Features Low RDS(on) Low gate ch
Datasheet: LNC18N50 , LNC20N60 , LNC20N65 , LNC2N60 , LNC2N65 , LNC4N60 , LNC4N65 , LNC4N80 , AO4407 , LNC5N65B , LNC7N60 , LNC7N60D , LNC7N65D , LND04R035B , LND06R062 , LND06R079 , LND08R055W3 .
Keywords - LNC5N50 MOSFET datasheet
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