LNC7N60D Datasheet. Specs and Replacement
Type Designator: LNC7N60D 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: TO-220
LNC7N60D substitution
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LNC7N60D datasheet
lnc7n60d lnd7n60d lng7n60d lnh7n60d.pdf
LNC7N60D LND7N60D LNG7N60D LNH7N60D Lonten N-channel 600V, 7A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 600V advanced planar VDMOS technology. The ID 7A resulting device has low conduction resistance, RDS(on),max 1.3 superior switching performance and high avalance Qg,typ 20.6nC energy. Features Low RDS(on) Low gate cha... See More ⇒
lnc7n60 lnd7n60.pdf
LNC7N60 LND7N60 Lonten N-channel 600V, 7A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 600V advanced planar VDMOS technology. The ID 7A resulting device has low conduction resistance, RDS(on),max 1.3 superior switching performance and high avalance Qg,typ 20.6nC energy. Features Low RDS(on) Low gate charge (typ. Qg =20.6nC... See More ⇒
lnc7n65d lnd7n65d lng7n65d lnh7n65d lnf7n65d.pdf
LNC7N65D LND7N65D LNG7N65D LNH7N65D LNF7N65D Lonten N-channel 650V, 7A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planar VDMOS technology. The ID 7A resulting device has low conduction resistance, RDS(on),max 1.4 superior switching performance and high avalance Qg,typ 20.7nC energy. Features Low RDS(on) Lo... See More ⇒
Detailed specifications: LNC2N60, LNC2N65, LNC4N60, LNC4N65, LNC4N80, LNC5N50, LNC5N65B, LNC7N60, AON7506, LNC7N65D, LND04R035B, LND06R062, LND06R079, LND08R055W3, LND08R085, LND10N60, LND10N65
Keywords - LNC7N60D MOSFET specs
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