STK4N30L PDF and Equivalents Search

 

STK4N30L Specs and Replacement

Type Designator: STK4N30L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 165 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm

Package: SOT82

STK4N30L substitution

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STK4N30L datasheet

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Detailed specifications: STK2N50 , STK2N80 , STK2NA60 , STK3055E , STK3N50 , STK3NA50 , STK4N25 , STK4N30 , IRFP250N , STK4N40 , STK6N20 , STK9N10 , STP10NA40 , STP10NA40FI , STP13N10L , STP13N10LFI , STP15N05L .

Keywords - STK4N30L MOSFET specs

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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 


 
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