LND2N60 Datasheet and Replacement. Cross Reference Search

LND2N60 Datasheet (PDF)

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LND2N60/LNC2N60/LNG2N60/LNH2N60Lonten N-channel 600V, 2A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 600VDSSadvanced planer VDMOS technology. The I 2ADresulting device has low conduction resistance, R 4.5DS(on),maxsuperior switching performance and high avalance Q 10.2 nCg,typenergy.Features Low RDS(on) Low gate charge

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LND2N65/LNC2N65/LNG2N65/LNH2N65 Lonten N-channel 650V, 2A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planer VDMOS technology. The ID 2A resulting device has low conduction resistance, RDS(on),max 5.2 superior switching performance and high avalance Qg,typ 10.2 nC energy. Features Low RDS(on) Low gate charge

8.2. Size:1401K lonten
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LND2N65/LNC2N65/LNG2N65/LNH2N65/LNU2N65Lonten N-channel 650V, 2A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 650VDSSadvanced planer VDMOS technology. The I 2ADresulting device has low conduction resistance, R 5.2DS(on),maxsuperior switching performance and high avalance Q 10.2 nCg,typenergy.Features Low RDS(on) Low gate

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .