All MOSFET. LND4N65 Datasheet

 

LND4N65 Datasheet and Replacement


   Type Designator: LND4N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
   Package: TO-220F
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LND4N65 Datasheet (PDF)

 ..1. Size:1098K  lonten
 lnc4n65 lnd4n65 lng4n65 lnh4n65 lnf4n65.pdf pdf_icon

LND4N65

LNC4N65\LND4N65\LNG4N65\LNH4N65\LNF4N65 Lonten N-channel 650V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planar VDMOS technology. The ID 4A resulting device has low conduction resistance, RDS(on),max 2.70 superior switching performance and high Qg,typ 12 nC avalance energy. Features Low RDS(on) Low gate

 8.1. Size:1293K  lonten
 lnc4n60 lnd4n60 lng4n60 lnh4n60 lnf4n60.pdf pdf_icon

LND4N65

LNC4N60\LND4N60\LNG4N60\LNH4N60\LNF4N60Lonten N-channel 600V, 4A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 600VDSSadvanced planar VDMOS technology. The I 4ADresulting device has low conduction resistance, R 2.4DS(on),maxsuperior switching performance and high avalance Q 12.8 nCg,typenergy.Features Low RDS(on) Low gate

 8.2. Size:1028K  lonten
 lnc4n60 lnd4n60 lng4n60 lnh4n60.pdf pdf_icon

LND4N65

LNC4N60\LND4N60\LNG4N60\LNH4N60 Lonten N-channel 600V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 600V advanced planar VDMOS technology. The ID 4A resulting device has low conduction resistance, RDS(on),max 2.4 superior switching performance and high avalance Qg,typ 12.8 nC energy. Features Low RDS(on) Low gate charge

 9.1. Size:1346K  lonten
 lnc4n80 lnd4n80 lnb4n80.pdf pdf_icon

LND4N65

LNC4N80/LND4N80/LNB4N80Lonten N-channel 800V, 4A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 800VDSSadvanced planer VDMOS technology. The I 4ADresulting device has low conduction resistance, R 3.8DS(on),maxsuperior switching performance and high avalanche Q 18.9 nCg,typenergy.Features Low RDS(on) Low gate charge (typ. Q

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Keywords - LND4N65 MOSFET datasheet

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