LNE06R062 PDF and Equivalents Search

 

LNE06R062 Specs and Replacement

Type Designator: LNE06R062

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 393 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm

Package: TO-263

LNE06R062 substitution

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LNE06R062 datasheet

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 lnc06r062 lnd06r062 lne06r062.pdf pdf_icon

LNE06R062

LNC06R062/LND06R062/LNE06R062 Lonten N-channel 60V, 120A, 6.2m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 6.2m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching performance, and wit... See More ⇒

 7.1. Size:1191K  lonten
 lnc06r079 lnd06r079 lne06r079.pdf pdf_icon

LNE06R062

LNC06R079/LND06R079/LNE06R079 Lonten N-channel 60V, 90A, 7.9m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 60V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 7.9m GS technology. This advanced technology has been I 90A D especially tailored to minimize on-state resistance, provide superior switching performance, and wit... See More ⇒

 8.1. Size:1062K  lonten
 lnc06r140 lne06r140 lng06r140 lnh06r140.pdf pdf_icon

LNE06R062

LNC06R140/LNE06R140/LNG06R140/LNH06R140 Lonten N-channel 60V, 45A, 14m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 60V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 14m GS technology. This advanced technology has been I 45A D especially tailored to minimize on-state resistance, provide superior switching performance,... See More ⇒

 8.2. Size:928K  lonten
 lnc06r110 lne06r110.pdf pdf_icon

LNE06R062

LNC06R110/LNE06R110 Lonten N-channel 60V, 60A, 11m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 60V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 11m GS technology. This advanced technology has been I 60A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hig... See More ⇒

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Detailed specifications: LND4N80, LND5N50, LND5N65B, LND7N60, LND7N60D, LND7N65D, LNDN10N65, LNDN12N65, IRFZ46N, LNE06R079, LNE06R110, LNE06R140, LNE07R085H, LNE08R055W3, LNE08R085, LNE08R160, LNE10N60

Keywords - LNE06R062 MOSFET specs

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