LNE06R140 Specs and Replacement
Type Designator: LNE06R140
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16.1 nS
Cossⓘ - Output Capacitance: 168 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: TO-263
LNE06R140 substitution
- MOSFET ⓘ Cross-Reference Search
LNE06R140 datasheet
lnc06r140 lne06r140 lng06r140 lnh06r140.pdf
LNC06R140/LNE06R140/LNG06R140/LNH06R140 Lonten N-channel 60V, 45A, 14m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 60V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 14m GS technology. This advanced technology has been I 45A D especially tailored to minimize on-state resistance, provide superior switching performance,... See More ⇒
lnc06r110 lne06r110.pdf
LNC06R110/LNE06R110 Lonten N-channel 60V, 60A, 11m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 60V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 11m GS technology. This advanced technology has been I 60A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hig... See More ⇒
lnc06r062 lnd06r062 lne06r062.pdf
LNC06R062/LND06R062/LNE06R062 Lonten N-channel 60V, 120A, 6.2m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 6.2m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching performance, and wit... See More ⇒
lnc06r079 lnd06r079 lne06r079.pdf
LNC06R079/LND06R079/LNE06R079 Lonten N-channel 60V, 90A, 7.9m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 60V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 7.9m GS technology. This advanced technology has been I 90A D especially tailored to minimize on-state resistance, provide superior switching performance, and wit... See More ⇒
Detailed specifications: LND7N60, LND7N60D, LND7N65D, LNDN10N65, LNDN12N65, LNE06R062, LNE06R079, LNE06R110, IRF9640, LNE07R085H, LNE08R055W3, LNE08R085, LNE08R160, LNE10N60, LNE10N65, LNE10R040W3, LNE10R180
Keywords - LNE06R140 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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