All MOSFET. LNE08R085 Datasheet

 

LNE08R085 MOSFET. Datasheet pdf. Equivalent


   Type Designator: LNE08R085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 127 nC
   trⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 256 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO-263

 LNE08R085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LNE08R085 Datasheet (PDF)

 ..1. Size:1349K  lonten
 lnc08r085 lnd08r085 lne08r085.pdf

LNE08R085 LNE08R085

LNC08R085\LND08R085/LNE08R085 Lonten N-channel 80V, 80A, 8.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 80V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 8.5m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with

 7.1. Size:1141K  lonten
 lnc08r055w3 lnd08r055w3 lne08r055w3.pdf

LNE08R085 LNE08R085

LNC08R055W3/LND08R055W3/LNE08R055W3 Lonten N-channel 85V, 120A, 5.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 85V effect transistors are using split gate trench DMOS RDS(on).max@ VGS=10V 5.5m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching per

 8.1. Size:989K  lonten
 lnc08r160 lne08r160.pdf

LNE08R085 LNE08R085

LNC08R160/LNE08R160 Lonten N-channel 80V, 60A, 16m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 80V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 16m technology. This advanced technology has been ID 60A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high

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History: 2N80 | 2N7109 | FSS9130D | IXFQ24N50P2

 

 
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