LNF12N60 MOSFET. Datasheet pdf. Equivalent
Type Designator: LNF12N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 37.6 nS
Cossⓘ - Output Capacitance: 163 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO-262
LNF12N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LNF12N60 Datasheet (PDF)
lnd12n60 lnc12n60 lne12n60 lnf12n60.pdf
LND12N60/LNC12N60/LNE12N60/LNF12N60 Lonten N-channel 600V, 12A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 600V advanced planer VDMOS technology. The ID 12A resulting device has low conduction resistance, RDS(on),max 0.75 superior switching performance and high avalance Qg,typ 40.8 nC energy. Features Low RDS(on) Low gate
lnd12n65 lnc12n65 lne12n65 lnf12n65 lndn12n65.pdf
LND12N65/LNC12N65/LNE12N65/LNF12N65/LNDN12N65Lonten N-channel 650V, 12A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 650VDSSadvanced planer VDMOS technology. The I 12ADresulting device has low conduction resistance, R 0.8DS(on),maxsuperior switching performance and high avalanche Q 41.9 nCg,typenergy.Features Low RDS(on)
lnd12n65 lnc12n65 lne12n65 lnf12n65.pdf
LND12N65/LNC12N65/LNE12N65/LNF12N65 Lonten N-channel 650V, 12A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planer VDMOS technology. The ID 12A resulting device has low conduction resistance, RDS(on),max 0.8 superior switching performance and high avalanche Qg,typ 41.9 nC energy. Features Low RDS(on) Low gate
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
