LNF4N60 MOSFET Datasheet: N-Ch, 600V, 4A. Full specification with pinout and replacement list

LNF4N60 Specs and Replacement

Type Designator: LNF4N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 77 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm

Package: TO-262

LNF4N60 substitution

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LNF4N60 datasheet

..1. Size:1293K lonten
lnc4n60 lnd4n60 lng4n60 lnh4n60 lnf4n60.pdf pdf_icon

LNC4N60 LND4N60 LNG4N60 LNH4N60 LNF4N60 Lonten N-channel 600V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 600V DSS advanced planar VDMOS technology. The I 4A D resulting device has low conduction resistance, R 2.4 DS(on),max superior switching performance and high avalance Q 12.8 nC g,typ energy. Features Low R DS(on) Low gate... See More ⇒

8.1. Size:1098K lonten
lnc4n65 lnd4n65 lng4n65 lnh4n65 lnf4n65.pdf pdf_icon

LNC4N65 LND4N65 LNG4N65 LNH4N65 LNF4N65 Lonten N-channel 650V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planar VDMOS technology. The ID 4A resulting device has low conduction resistance, RDS(on),max 2.70 superior switching performance and high Qg,typ 12 nC avalance energy. Features Low RDS(on) Low gate... See More ⇒

Detailed specifications: LNE10R040W3, LNE10R180, LNE12N60, LNE12N65, LNF10N60, LNF10N65, LNF12N60, LNF12N65, IRF740, LNF4N65, LNF7N65D, XR46000ESETR, MC2539, MF5853CS, NP2301AMR-G, NP8205MR, LNG03R031