LNG045R210 Datasheet and Replacement
Type Designator: LNG045R210
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 104.8 nS
Cossⓘ - Output Capacitance: 87.3 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: TO-252
LNG045R210 substitution
LNG045R210 Datasheet (PDF)
lnh045r210 lng045r210.pdf

LNH045R210/LNG045R210Lonten N-channel 45V, 35A, 21m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 45VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 21mGStechnology. This advanced technology has been I 35ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand h
lnh045r140 lng045r140.pdf

LNH045R140/LNG045R140 Lonten N-channel 45V, 43A, 14m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 45V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 14m technology. This advanced technology has been ID 43A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hi
lnc045r090 lng045r090 lnh045r090.pdf

LNC045R090/LNG045R090/LNH045R090Lonten N-channel 45V, 70A, 9m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 45VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 9mGStechnology. This advanced technology has been I 70ADespecially tailored to minimize on-state resistance,provide superior switching performance, and with
lnh045r055 lng045r055.pdf

LNH045R055/LNG045R055 Lonten N-channel 45V, 85A, 5.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 45V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 5.5m technology. This advanced technology has been ID 85A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand
Datasheet: MC2539 , MF5853CS , NP2301AMR-G , NP8205MR , LNG03R031 , LNG045R055 , LNG045R090 , LNG045R140 , IRFP260N , LNG04R035B , LNG04R050 , LNG04R075 , LNG04R120 , LNG04R165 , LNG05R075 , LNG05R100 , LNG05R155 .
Keywords - LNG045R210 MOSFET datasheet
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