LNG04R050 MOSFET Datasheet: N-Ch, 40V, 100A. Full specification with pinout and replacement list

LNG04R050 Specs and Replacement

   Type Designator: LNG04R050
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 213.6 nS
   Cossⓘ - Output Capacitance: 410.4 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO-252

LNG04R050 substitution

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LNG04R050 datasheet

..1. Size:1068K lonten
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LNH04R050/LNG04R050 Lonten N-channel 40V, 100A, 5.0m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 5.0m technology. This advanced technology has been ID 100A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand ... See More ⇒

7.1. Size:1148K lonten
lnh04r075 lng04r075.pdf pdf_icon

LNH04R075/LNG04R075 Lonten N-channel 40V, 80A, 7.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 7.5m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hi... See More ⇒

7.2. Size:1002K lonten
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LNG04R035B/ LNH04R035B Lonten N-channel 40V, 120A, 3.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 3.5m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching performance, and with sta... See More ⇒

8.1. Size:991K lonten
lnh04r120 lng04r120.pdf pdf_icon

LNH04R120/LNG04R120 Lonten N-channel 40V, 47A, 12m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 12m technology. This advanced technology has been ID 47A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high... See More ⇒