LNG04R075 Specs and Replacement
Type Designator: LNG04R075
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 110.6 nS
Cossⓘ - Output Capacitance: 316 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: TO-252
LNG04R075 substitution
- MOSFET ⓘ Cross-Reference Search
LNG04R075 datasheet
lnh04r075 lng04r075.pdf
LNH04R075/LNG04R075 Lonten N-channel 40V, 80A, 7.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 7.5m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hi... See More ⇒
lng04r035b lnh04r035b.pdf
LNG04R035B/ LNH04R035B Lonten N-channel 40V, 120A, 3.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 3.5m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching performance, and with sta... See More ⇒
lnh04r050 lng04r050.pdf
LNH04R050/LNG04R050 Lonten N-channel 40V, 100A, 5.0m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 5.0m technology. This advanced technology has been ID 100A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand ... See More ⇒
lnh04r120 lng04r120.pdf
LNH04R120/LNG04R120 Lonten N-channel 40V, 47A, 12m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 12m technology. This advanced technology has been ID 47A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high... See More ⇒
Detailed specifications: NP8205MR, LNG03R031, LNG045R055, LNG045R090, LNG045R140, LNG045R210, LNG04R035B, LNG04R050, IRFB4227, LNG04R120, LNG04R165, LNG05R075, LNG05R100, LNG05R155, LNG05R230, LNG06R062, LNG06R079
Keywords - LNG04R075 MOSFET specs
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LNG04R075 replacement
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