LNG05R155 MOSFET. Datasheet pdf. Equivalent
Type Designator: LNG05R155
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 32.5 nC
trⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 119 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0155 Ohm
Package: TO-252
LNG05R155 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LNG05R155 Datasheet (PDF)
lnh05r155 lng05r155.pdf
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