LNG05R155 Specs and Replacement
Type Designator: LNG05R155
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 119 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0155 Ohm
Package: TO-252
LNG05R155 substitution
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LNG05R155 datasheet
lnh05r155 lng05r155.pdf
LNH05R155/LNG05R155 Lonten N-channel 50V, 40A, 15.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 50V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 15.5m GS technology. This advanced technology has been I 40A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand... See More ⇒
lnh05r100 lng05r100.pdf
LNH05R100/LNG05R100 Lonten N-channel 50V, 64A, 10m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 50V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 10m GS technology. This advanced technology has been I 64A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hig... See More ⇒
lnh05r075 lng05r075.pdf
LNH05R075/LNG05R075 Lonten N-channel 50V, 80A, 7.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 50V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 7.5m GS technology. This advanced technology has been I 80A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand h... See More ⇒
lnh05r230 lng05r230.pdf
LNH05R230/LNG05R230 Lonten N-channel 50V, 32A, 23m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 50V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 23m GS technology. This advanced technology has been I 32A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hig... See More ⇒
Detailed specifications: LNG045R210, LNG04R035B, LNG04R050, LNG04R075, LNG04R120, LNG04R165, LNG05R075, LNG05R100, 2N7000, LNG05R230, LNG06R062, LNG06R079, LNG06R110, LNG06R140, LNG06R200, LNG06R230, LNG06R310
Keywords - LNG05R155 MOSFET specs
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