All MOSFET. LNG06R110 Datasheet

 

LNG06R110 Datasheet and Replacement


   Type Designator: LNG06R110
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 167.5 nS
   Cossⓘ - Output Capacitance: 209 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO-252
 

 LNG06R110 substitution

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LNG06R110 Datasheet (PDF)

 ..1. Size:1144K  lonten
 lnh06r110 lng06r110.pdf pdf_icon

LNG06R110

LNH06R110/LNG06R110 Lonten N-channel 60V, 60A, 11m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 11m technology. This advanced technology has been ID 60A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high

 7.1. Size:1062K  lonten
 lnc06r140 lne06r140 lng06r140 lnh06r140.pdf pdf_icon

LNG06R110

LNC06R140/LNE06R140/LNG06R140/LNH06R140Lonten N-channel 60V, 45A, 14m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 14mGStechnology. This advanced technology has been I 45ADespecially tailored to minimize on-state resistance,provide superior switching performance,

 7.2. Size:1042K  lonten
 lnh06r140 lng06r140.pdf pdf_icon

LNG06R110

LNH06R140/LNG06R140 Lonten N-channel 60V, 45A, 14m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 14m technology. This advanced technology has been ID 45A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high

 8.1. Size:930K  lonten
 lng06r310 lnh06r310.pdf pdf_icon

LNG06R110

LNG06R310/LNH06R310Lonten N-channel 60V, 28A, 31m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 31mGStechnology. This advanced technology has been I 28ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand hig

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Datasheet: LNG04R120 , LNG04R165 , LNG05R075 , LNG05R100 , LNG05R155 , LNG05R230 , LNG06R062 , LNG06R079 , IRFP250N , LNG06R140 , LNG06R200 , LNG06R230 , LNG06R310 , LNG08R085 , LNG2N60 , LNG2N65 , LNG4N60 .

Keywords - LNG06R110 MOSFET datasheet

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