LNG06R140 Datasheet and Replacement
Type Designator: LNG06R140
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.9 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 50 nC
tr ⓘ - Rise Time: 16.1 nS
Cossⓘ - Output Capacitance: 168 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: TO-252
LNG06R140 substitution
LNG06R140 Datasheet (PDF)
lnc06r140 lne06r140 lng06r140 lnh06r140.pdf

LNC06R140/LNE06R140/LNG06R140/LNH06R140Lonten N-channel 60V, 45A, 14m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 14mGStechnology. This advanced technology has been I 45ADespecially tailored to minimize on-state resistance,provide superior switching performance,
lnh06r140 lng06r140.pdf

LNH06R140/LNG06R140 Lonten N-channel 60V, 45A, 14m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 14m technology. This advanced technology has been ID 45A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high
lnh06r110 lng06r110.pdf

LNH06R110/LNG06R110 Lonten N-channel 60V, 60A, 11m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 11m technology. This advanced technology has been ID 60A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high
lng06r310 lnh06r310.pdf

LNG06R310/LNH06R310Lonten N-channel 60V, 28A, 31m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 31mGStechnology. This advanced technology has been I 28ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand hig
Datasheet: LNG04R165 , LNG05R075 , LNG05R100 , LNG05R155 , LNG05R230 , LNG06R062 , LNG06R079 , LNG06R110 , 7N65 , LNG06R200 , LNG06R230 , LNG06R310 , LNG08R085 , LNG2N60 , LNG2N65 , LNG4N60 , LNG4N65 .
Keywords - LNG06R140 MOSFET datasheet
LNG06R140 cross reference
LNG06R140 equivalent finder
LNG06R140 lookup
LNG06R140 substitution
LNG06R140 replacement



LIST
Last Update
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
2sc1115 | c3998 transistor | 2sa679 | 2sc3181 | 2sb324 | 2sc1904 | 2sc281 | m28s transistor