LNG06R200 Specs and Replacement
Type Designator: LNG06R200
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 105 nS
Cossⓘ - Output Capacitance: 151 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TO-252
LNG06R200 substitution
- MOSFET ⓘ Cross-Reference Search
LNG06R200 datasheet
lnh06r200 lng06r200 lnc06r200.pdf
LNH06R200/LNG06R200/LNC06R200 Lonten N-channel 60V, 35A, 20m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 60V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 20m GS technology. This advanced technology has been I 35A D especially tailored to minimize on-state resistance, provide superior switching performance, and with ... See More ⇒
lnh06r230 lng06r230 lnc06r230.pdf
LNH06R230/LNG06R230/LNC06R230 Lonten N-channel 60V, 33A, 23m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 60V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 23m GS technology. This advanced technology has been I 33A D especially tailored to minimize on-state resistance, provide superior switching performance, and with ... See More ⇒
lng06r310 lnh06r310.pdf
LNG06R310/LNH06R310 Lonten N-channel 60V, 28A, 31m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 60V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 31m GS technology. This advanced technology has been I 28A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hig... See More ⇒
lnc06r140 lne06r140 lng06r140 lnh06r140.pdf
LNC06R140/LNE06R140/LNG06R140/LNH06R140 Lonten N-channel 60V, 45A, 14m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 60V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 14m GS technology. This advanced technology has been I 45A D especially tailored to minimize on-state resistance, provide superior switching performance,... See More ⇒
Detailed specifications: LNG05R075, LNG05R100, LNG05R155, LNG05R230, LNG06R062, LNG06R079, LNG06R110, LNG06R140, IRF9540, LNG06R230, LNG06R310, LNG08R085, LNG2N60, LNG2N65, LNG4N60, LNG4N65, LNG4N80
Keywords - LNG06R200 MOSFET specs
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