LNG06R200 MOSFET. Datasheet pdf. Equivalent
Type Designator: LNG06R200
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 35 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 29.5 nC
trⓘ - Rise Time: 105 nS
Cossⓘ - Output Capacitance: 151 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TO-252
LNG06R200 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LNG06R200 Datasheet (PDF)
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