LNG5N65B Specs and Replacement
Type Designator: LNG5N65B
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
Package: TO-252
LNG5N65B substitution
- MOSFET ⓘ Cross-Reference Search
LNG5N65B datasheet
lnc5n65b lnd5n65b lng5n65b lnh5n65b.pdf
LNC5N65B LND5N65B LNG5N65B LNH5N65B Lonten N-channel 650V, 5A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 650V DSS advanced planar VDMOS technology. The I 5A D resulting device has low conduction resistance, R 2.1 DS(on),max superior switching performance and high avalanche Q 14.5 nC g,typ energy. Features Low R DS(on) Low gate ch... See More ⇒
lnc5n50 lnd5n50 lng5n50 lnh5n50.pdf
LNC5N50 LND5N50 LNG5N50 LNH5N50 Lonten N-channel 500V, 5A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 500V DSS advanced planar VDMOS technology. The I 5A D resulting device has low conduction resistance, R 1.6 DS(on),max superior switching performance and high avalanche Q 12.8 nC g,typ energy. Features Low R DS(on) Low gate charge... See More ⇒
Detailed specifications: LNG06R310, LNG08R085, LNG2N60, LNG2N65, LNG4N60, LNG4N65, LNG4N80, LNG5N50, IRFP260, LNG7N60D, LNG7N65D, LNH03R031, LNH045R055, LNH045R090, LNH045R140, LNH045R210, LNH04R035B
Keywords - LNG5N65B MOSFET specs
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History: WMS13N03T1
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