All MOSFET. LNG5N65B Datasheet

 

LNG5N65B Datasheet and Replacement


   Type Designator: LNG5N65B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
   Package: TO-252
 

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LNG5N65B Datasheet (PDF)

 ..1. Size:1292K  lonten
 lnc5n65b lnd5n65b lng5n65b lnh5n65b.pdf pdf_icon

LNG5N65B

LNC5N65B\LND5N65B\LNG5N65B\LNH5N65BLonten N-channel 650V, 5A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 650VDSSadvanced planar VDMOS technology. The I 5ADresulting device has low conduction resistance, R 2.1DS(on),maxsuperior switching performance and high avalanche Q 14.5 nCg,typenergy.Features Low RDS(on) Low gate ch

 9.1. Size:1205K  lonten
 lnc5n50 lnd5n50 lng5n50 lnh5n50.pdf pdf_icon

LNG5N65B

LNC5N50\LND5N50\LNG5N50\LNH5N50Lonten N-channel 500V, 5A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 500VDSSadvanced planar VDMOS technology. The I 5ADresulting device has low conduction resistance, R 1.6DS(on),maxsuperior switching performance and high avalanche Q 12.8 nCg,typenergy.Features Low RDS(on) Low gate charge

Datasheet: LNG06R310 , LNG08R085 , LNG2N60 , LNG2N65 , LNG4N60 , LNG4N65 , LNG4N80 , LNG5N50 , 8205A , LNG7N60D , LNG7N65D , LNH03R031 , LNH045R055 , LNH045R090 , LNH045R140 , LNH045R210 , LNH04R035B .

History: AP50SL290DH

Keywords - LNG5N65B MOSFET datasheet

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