LNH045R090 Datasheet and Replacement
Type Designator: LNH045R090
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 190 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO-251
LNH045R090 substitution
LNH045R090 Datasheet (PDF)
lnc045r090 lng045r090 lnh045r090.pdf

LNC045R090/LNG045R090/LNH045R090Lonten N-channel 45V, 70A, 9m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 45VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 9mGStechnology. This advanced technology has been I 70ADespecially tailored to minimize on-state resistance,provide superior switching performance, and with
lnh045r090 lng045r090.pdf

LNH045R090/LNG045R090 Lonten N-channel 45V, 70A, 9m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 45V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 9m technology. This advanced technology has been ID 70A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high
lnh045r055 lng045r055.pdf

LNH045R055/LNG045R055 Lonten N-channel 45V, 85A, 5.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 45V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 5.5m technology. This advanced technology has been ID 85A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand
lnh045r140 lng045r140.pdf

LNH045R140/LNG045R140 Lonten N-channel 45V, 43A, 14m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 45V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 14m technology. This advanced technology has been ID 43A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hi
Datasheet: LNG4N65 , LNG4N80 , LNG5N50 , LNG5N65B , LNG7N60D , LNG7N65D , LNH03R031 , LNH045R055 , TK10A60D , LNH045R140 , LNH045R210 , LNH04R035B , LNH04R050 , LNH04R075 , LNH04R120 , LNH04R165 , LNH05R075 .
History: MMP3415E | PHD18NQ10T | BRF5N60 | LSB65R125HT | RT3K11M | H02N60SI | PD551BA
Keywords - LNH045R090 MOSFET datasheet
LNH045R090 cross reference
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LNH045R090 substitution
LNH045R090 replacement
History: MMP3415E | PHD18NQ10T | BRF5N60 | LSB65R125HT | RT3K11M | H02N60SI | PD551BA



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