LNH045R210 MOSFET Datasheet: N-Ch, 45V, 35A. Full specification with pinout and replacement list

LNH045R210 Specs and Replacement

Type Designator: LNH045R210

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 104.8 nS

Cossⓘ - Output Capacitance: 87.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm

Package: TO-251

LNH045R210 substitution

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LNH045R210 datasheet

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LNH045R210/LNG045R210 Lonten N-channel 45V, 35A, 21m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 45V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 21m GS technology. This advanced technology has been I 35A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand h... See More ⇒

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LNH045R140/LNG045R140 Lonten N-channel 45V, 43A, 14m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 45V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 14m technology. This advanced technology has been ID 43A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hi... See More ⇒

7.2. Size:918K lonten
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LNC045R090/LNG045R090/LNH045R090 Lonten N-channel 45V, 70A, 9m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 45V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 9m GS technology. This advanced technology has been I 70A D especially tailored to minimize on-state resistance, provide superior switching performance, and with... See More ⇒

7.3. Size:1003K lonten
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LNH045R055/LNG045R055 Lonten N-channel 45V, 85A, 5.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 45V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 5.5m technology. This advanced technology has been ID 85A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand ... See More ⇒