All MOSFET. LNH04R075 Datasheet

 

LNH04R075 Datasheet and Replacement


   Type Designator: LNH04R075
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 110.6 nS
   Cossⓘ - Output Capacitance: 316 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO-251
 

 LNH04R075 substitution

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LNH04R075 Datasheet (PDF)

 ..1. Size:1148K  lonten
 lnh04r075 lng04r075.pdf pdf_icon

LNH04R075

LNH04R075/LNG04R075 Lonten N-channel 40V, 80A, 7.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 7.5m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hi

 7.1. Size:1002K  lonten
 lng04r035b lnh04r035b.pdf pdf_icon

LNH04R075

LNG04R035B/ LNH04R035B Lonten N-channel 40V, 120A, 3.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 3.5m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching performance, and with sta

 7.2. Size:1068K  lonten
 lnh04r050 lng04r050.pdf pdf_icon

LNH04R075

LNH04R050/LNG04R050 Lonten N-channel 40V, 100A, 5.0m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 5.0m technology. This advanced technology has been ID 100A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand

 8.1. Size:991K  lonten
 lnh04r120 lng04r120.pdf pdf_icon

LNH04R075

LNH04R120/LNG04R120 Lonten N-channel 40V, 47A, 12m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 12m technology. This advanced technology has been ID 47A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high

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Datasheet: LNG7N65D , LNH03R031 , LNH045R055 , LNH045R090 , LNH045R140 , LNH045R210 , LNH04R035B , LNH04R050 , IRFB3607 , LNH04R120 , LNH04R165 , LNH05R075 , LNH05R100 , LNH05R155 , LNH05R230 , LNH06R062 , LNH06R079 .

History: ZXM64P03X | WSF50N10G | SWF13N70D | AON6906 | SMF14N65 | HCF70R910 | AON6974

Keywords - LNH04R075 MOSFET datasheet

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 LNH04R075 replacement

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