All MOSFET. LNH05R230 Datasheet

 

LNH05R230 Datasheet and Replacement


   Type Designator: LNH05R230
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO-251
 

 LNH05R230 substitution

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LNH05R230 Datasheet (PDF)

 ..1. Size:940K  lonten
 lnh05r230 lng05r230.pdf pdf_icon

LNH05R230

LNH05R230/LNG05R230Lonten N-channel 50V, 32A, 23m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 50VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 23mGStechnology. This advanced technology has been I 32ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand hig

 8.1. Size:959K  lonten
 lnh05r155 lng05r155.pdf pdf_icon

LNH05R230

LNH05R155/LNG05R155Lonten N-channel 50V, 40A, 15.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 50VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 15.5mGStechnology. This advanced technology has been I 40ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand

 8.2. Size:951K  lonten
 lnh05r075 lng05r075.pdf pdf_icon

LNH05R230

LNH05R075/LNG05R075Lonten N-channel 50V, 80A, 7.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 50VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 7.5mGStechnology. This advanced technology has been I 80ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand h

 8.3. Size:927K  lonten
 lnh05r100 lng05r100.pdf pdf_icon

LNH05R230

LNH05R100/LNG05R100Lonten N-channel 50V, 64A, 10m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 50VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 10mGStechnology. This advanced technology has been I 64ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand hig

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Datasheet: LNH04R035B , LNH04R050 , LNH04R075 , LNH04R120 , LNH04R165 , LNH05R075 , LNH05R100 , LNH05R155 , 20N50 , LNH06R062 , LNH06R079 , LNH06R110 , LNH06R140 , LNH06R200 , LNH06R230 , LNH06R310 , LNH08R085 .

History: CMLM0574

Keywords - LNH05R230 MOSFET datasheet

 LNH05R230 cross reference
 LNH05R230 equivalent finder
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