LNH06R062 Specs and Replacement
Type Designator: LNH06R062
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 393 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
Package: TO-251
LNH06R062 substitution
- MOSFET ⓘ Cross-Reference Search
LNH06R062 datasheet
lnh06r062 lng06r062.pdf
LNH06R062/LNG06R062 Lonten N-channel 60V, 100A, 6.2m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 6.2m technology. This advanced technology has been ID 100A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand ... See More ⇒
lnh06r079 lng06r079.pdf
LNH06R079/LNG06R079 Lonten N-channel 60V, 80A, 7.9m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 7.9m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hi... See More ⇒
lng06r310 lnh06r310.pdf
LNG06R310/LNH06R310 Lonten N-channel 60V, 28A, 31m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 60V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 31m GS technology. This advanced technology has been I 28A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hig... See More ⇒
lnc06r140 lne06r140 lng06r140 lnh06r140.pdf
LNC06R140/LNE06R140/LNG06R140/LNH06R140 Lonten N-channel 60V, 45A, 14m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 60V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 14m GS technology. This advanced technology has been I 45A D especially tailored to minimize on-state resistance, provide superior switching performance,... See More ⇒
Detailed specifications: LNH04R050, LNH04R075, LNH04R120, LNH04R165, LNH05R075, LNH05R100, LNH05R155, LNH05R230, IRFP450, LNH06R079, LNH06R110, LNH06R140, LNH06R200, LNH06R230, LNH06R310, LNH08R085, LNH2N60
Keywords - LNH06R062 MOSFET specs
LNH06R062 cross reference
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LNH06R062 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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