LNH06R062
MOSFET. Datasheet pdf. Equivalent
Type Designator: LNH06R062
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 110
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 100
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 130
nC
trⓘ - Rise Time: 13
nS
Cossⓘ -
Output Capacitance: 393
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0062
Ohm
Package:
TO-251
LNH06R062
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LNH06R062
Datasheet (PDF)
..1. Size:1013K lonten
lnh06r062 lng06r062.pdf 
LNH06R062/LNG06R062 Lonten N-channel 60V, 100A, 6.2m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 6.2m technology. This advanced technology has been ID 100A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand
7.1. Size:1140K lonten
lnh06r079 lng06r079.pdf
LNH06R079/LNG06R079 Lonten N-channel 60V, 80A, 7.9m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 7.9m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hi
8.1. Size:930K lonten
lng06r310 lnh06r310.pdf
LNG06R310/LNH06R310Lonten N-channel 60V, 28A, 31m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 31mGStechnology. This advanced technology has been I 28ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand hig
8.2. Size:1062K lonten
lnc06r140 lne06r140 lng06r140 lnh06r140.pdf
LNC06R140/LNE06R140/LNG06R140/LNH06R140Lonten N-channel 60V, 45A, 14m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 14mGStechnology. This advanced technology has been I 45ADespecially tailored to minimize on-state resistance,provide superior switching performance,
8.3. Size:795K lonten
lnh06r230 lng06r230 lnc06r230.pdf
LNH06R230/LNG06R230/LNC06R230Lonten N-channel 60V, 33A, 23m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 23mGStechnology. This advanced technology has been I 33ADespecially tailored to minimize on-state resistance,provide superior switching performance, and with
8.4. Size:784K lonten
lnh06r200 lng06r200 lnc06r200.pdf
LNH06R200/LNG06R200/LNC06R200Lonten N-channel 60V, 35A, 20m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 20mGStechnology. This advanced technology has been I 35ADespecially tailored to minimize on-state resistance,provide superior switching performance, and with
8.5. Size:1144K lonten
lnh06r110 lng06r110.pdf
LNH06R110/LNG06R110 Lonten N-channel 60V, 60A, 11m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 11m technology. This advanced technology has been ID 60A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high
8.6. Size:1042K lonten
lnh06r140 lng06r140.pdf
LNH06R140/LNG06R140 Lonten N-channel 60V, 45A, 14m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 14m technology. This advanced technology has been ID 45A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high
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