LNH06R110 Specs and Replacement
Type Designator: LNH06R110
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 167.5 nS
Cossⓘ - Output Capacitance: 209 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: TO-251
LNH06R110 substitution
- MOSFET ⓘ Cross-Reference Search
LNH06R110 datasheet
lnh06r110 lng06r110.pdf
LNH06R110/LNG06R110 Lonten N-channel 60V, 60A, 11m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 11m technology. This advanced technology has been ID 60A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high... See More ⇒
lnc06r140 lne06r140 lng06r140 lnh06r140.pdf
LNC06R140/LNE06R140/LNG06R140/LNH06R140 Lonten N-channel 60V, 45A, 14m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 60V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 14m GS technology. This advanced technology has been I 45A D especially tailored to minimize on-state resistance, provide superior switching performance,... See More ⇒
lnh06r140 lng06r140.pdf
LNH06R140/LNG06R140 Lonten N-channel 60V, 45A, 14m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 14m technology. This advanced technology has been ID 45A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high... See More ⇒
lng06r310 lnh06r310.pdf
LNG06R310/LNH06R310 Lonten N-channel 60V, 28A, 31m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 60V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 31m GS technology. This advanced technology has been I 28A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hig... See More ⇒
Detailed specifications: LNH04R120, LNH04R165, LNH05R075, LNH05R100, LNH05R155, LNH05R230, LNH06R062, LNH06R079, AO4407, LNH06R140, LNH06R200, LNH06R230, LNH06R310, LNH08R085, LNH2N60, LNH2N65, LNH4N60
Keywords - LNH06R110 MOSFET specs
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