LNH06R140 MOSFET Datasheet: N-Ch, 60V, 45A. Full specification with pinout and replacement list

LNH06R140 Specs and Replacement

Type Designator: LNH06R140

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16.1 nS

Cossⓘ - Output Capacitance: 168 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: TO-251

LNH06R140 substitution

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LNH06R140 datasheet

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lnc06r140 lne06r140 lng06r140 lnh06r140.pdf pdf_icon

LNC06R140/LNE06R140/LNG06R140/LNH06R140 Lonten N-channel 60V, 45A, 14m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 60V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 14m GS technology. This advanced technology has been I 45A D especially tailored to minimize on-state resistance, provide superior switching performance,... See More ⇒

..2. Size:1042K lonten
lnh06r140 lng06r140.pdf pdf_icon

LNH06R140/LNG06R140 Lonten N-channel 60V, 45A, 14m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 14m technology. This advanced technology has been ID 45A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high... See More ⇒

7.1. Size:1144K lonten
lnh06r110 lng06r110.pdf pdf_icon

LNH06R110/LNG06R110 Lonten N-channel 60V, 60A, 11m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 11m technology. This advanced technology has been ID 60A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high... See More ⇒

8.1. Size:930K lonten
lng06r310 lnh06r310.pdf pdf_icon

LNG06R310/LNH06R310 Lonten N-channel 60V, 28A, 31m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 60V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 31m GS technology. This advanced technology has been I 28A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hig... See More ⇒