LNH06R140 MOSFET. Datasheet pdf. Equivalent
Type Designator: LNH06R140
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.9 V
|Id|ⓘ - Maximum Drain Current: 45 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 50 nC
trⓘ - Rise Time: 16.1 nS
Cossⓘ - Output Capacitance: 168 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: TO-251
LNH06R140 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LNH06R140 Datasheet (PDF)
lnc06r140 lne06r140 lng06r140 lnh06r140.pdf
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lnh06r140 lng06r140.pdf
LNH06R140/LNG06R140 Lonten N-channel 60V, 45A, 14m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 14m technology. This advanced technology has been ID 45A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high
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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IXFB44N100P
History: IXFB44N100P
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