LNH5N50 Specs and Replacement
Type Designator: LNH5N50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 33.1 nS
Cossⓘ - Output Capacitance: 80.3 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
Package: TO-251
LNH5N50 substitution
- MOSFET ⓘ Cross-Reference Search
LNH5N50 datasheet
lnc5n50 lnd5n50 lng5n50 lnh5n50.pdf
LNC5N50 LND5N50 LNG5N50 LNH5N50 Lonten N-channel 500V, 5A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 500V DSS advanced planar VDMOS technology. The I 5A D resulting device has low conduction resistance, R 1.6 DS(on),max superior switching performance and high avalanche Q 12.8 nC g,typ energy. Features Low R DS(on) Low gate charge... See More ⇒
lnc5n65b lnd5n65b lng5n65b lnh5n65b.pdf
LNC5N65B LND5N65B LNG5N65B LNH5N65B Lonten N-channel 650V, 5A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 650V DSS advanced planar VDMOS technology. The I 5A D resulting device has low conduction resistance, R 2.1 DS(on),max superior switching performance and high avalanche Q 14.5 nC g,typ energy. Features Low R DS(on) Low gate ch... See More ⇒
Detailed specifications: LNH06R230 , LNH06R310 , LNH08R085 , LNH2N60 , LNH2N65 , LNH4N60 , LNH4N65 , LNH4N80 , 18N50 , LNH5N65B , LNH7N60D , LNH7N65D , LNL04R075 , LNL04R120 , LNN04R040B , LNN04R050 , LNN04R075 .
Keywords - LNH5N50 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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