All MOSFET. LNH5N50 Datasheet

 

LNH5N50 Datasheet and Replacement


   Type Designator: LNH5N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33.1 nS
   Cossⓘ - Output Capacitance: 80.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO-251
 

 LNH5N50 substitution

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LNH5N50 Datasheet (PDF)

 ..1. Size:1205K  lonten
 lnc5n50 lnd5n50 lng5n50 lnh5n50.pdf pdf_icon

LNH5N50

LNC5N50\LND5N50\LNG5N50\LNH5N50Lonten N-channel 500V, 5A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 500VDSSadvanced planar VDMOS technology. The I 5ADresulting device has low conduction resistance, R 1.6DS(on),maxsuperior switching performance and high avalanche Q 12.8 nCg,typenergy.Features Low RDS(on) Low gate charge

 9.1. Size:1292K  lonten
 lnc5n65b lnd5n65b lng5n65b lnh5n65b.pdf pdf_icon

LNH5N50

LNC5N65B\LND5N65B\LNG5N65B\LNH5N65BLonten N-channel 650V, 5A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 650VDSSadvanced planar VDMOS technology. The I 5ADresulting device has low conduction resistance, R 2.1DS(on),maxsuperior switching performance and high avalanche Q 14.5 nCg,typenergy.Features Low RDS(on) Low gate ch

Datasheet: LNH06R230 , LNH06R310 , LNH08R085 , LNH2N60 , LNH2N65 , LNH4N60 , LNH4N65 , LNH4N80 , RU6888R , LNH5N65B , LNH7N60D , LNH7N65D , LNL04R075 , LNL04R120 , LNN04R040B , LNN04R050 , LNN04R075 .

History: IRFP460NPBF | SLU5N50S2 | HIRF830F | HIRF840F | IRF740AS | SIA400EDJ | WML25N50C4

Keywords - LNH5N50 MOSFET datasheet

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