LNH5N65B MOSFET Datasheet: N-Ch, 650V, 5A. Full specification with pinout and replacement list

LNH5N65B Specs and Replacement

Type Designator: LNH5N65B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm

Package: TO-251

LNH5N65B substitution

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LNH5N65B datasheet

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lnc5n65b lnd5n65b lng5n65b lnh5n65b.pdf pdf_icon

LNC5N65B LND5N65B LNG5N65B LNH5N65B Lonten N-channel 650V, 5A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 650V DSS advanced planar VDMOS technology. The I 5A D resulting device has low conduction resistance, R 2.1 DS(on),max superior switching performance and high avalanche Q 14.5 nC g,typ energy. Features Low R DS(on) Low gate ch... See More ⇒

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lnc5n50 lnd5n50 lng5n50 lnh5n50.pdf pdf_icon

LNC5N50 LND5N50 LNG5N50 LNH5N50 Lonten N-channel 500V, 5A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 500V DSS advanced planar VDMOS technology. The I 5A D resulting device has low conduction resistance, R 1.6 DS(on),max superior switching performance and high avalanche Q 12.8 nC g,typ energy. Features Low R DS(on) Low gate charge... See More ⇒

Detailed specifications: LNH06R310, LNH08R085, LNH2N60, LNH2N65, LNH4N60, LNH4N65, LNH4N80, LNH5N50, 20N50, LNH7N60D, LNH7N65D, LNL04R075, LNL04R120, LNN04R040B, LNN04R050, LNN04R075, LNN06R062