LNH7N60D MOSFET Datasheet: N-Ch, 600V, 7A. Full specification with pinout and replacement list

LNH7N60D Specs and Replacement

Type Designator: LNH7N60D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm

Package: TO-251

LNH7N60D substitution

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LNH7N60D datasheet

..1. Size:1036K lonten
lnc7n60d lnd7n60d lng7n60d lnh7n60d.pdf pdf_icon

LNC7N60D LND7N60D LNG7N60D LNH7N60D Lonten N-channel 600V, 7A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 600V advanced planar VDMOS technology. The ID 7A resulting device has low conduction resistance, RDS(on),max 1.3 superior switching performance and high avalance Qg,typ 20.6nC energy. Features Low RDS(on) Low gate cha... See More ⇒

8.1. Size:1097K lonten
lnc7n65d lnd7n65d lng7n65d lnh7n65d lnf7n65d.pdf pdf_icon

LNC7N65D LND7N65D LNG7N65D LNH7N65D LNF7N65D Lonten N-channel 650V, 7A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planar VDMOS technology. The ID 7A resulting device has low conduction resistance, RDS(on),max 1.4 superior switching performance and high avalance Qg,typ 20.7nC energy. Features Low RDS(on) Lo... See More ⇒

Detailed specifications: LNH08R085, LNH2N60, LNH2N65, LNH4N60, LNH4N65, LNH4N80, LNH5N50, LNH5N65B, IRF520, LNH7N65D, LNL04R075, LNL04R120, LNN04R040B, LNN04R050, LNN04R075, LNN06R062, LNN06R140