All MOSFET. LNH7N60D Datasheet

 

LNH7N60D Datasheet and Replacement


   Type Designator: LNH7N60D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO-251
 

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LNH7N60D Datasheet (PDF)

 ..1. Size:1036K  lonten
 lnc7n60d lnd7n60d lng7n60d lnh7n60d.pdf pdf_icon

LNH7N60D

LNC7N60D\LND7N60D\LNG7N60D\LNH7N60D Lonten N-channel 600V, 7A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 600V advanced planar VDMOS technology. The ID 7A resulting device has low conduction resistance, RDS(on),max 1.3 superior switching performance and high avalance Qg,typ 20.6nC energy. Features Low RDS(on) Low gate cha

 8.1. Size:1097K  lonten
 lnc7n65d lnd7n65d lng7n65d lnh7n65d lnf7n65d.pdf pdf_icon

LNH7N60D

LNC7N65D\LND7N65D\LNG7N65D\LNH7N65D\ LNF7N65D Lonten N-channel 650V, 7A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planar VDMOS technology. The ID 7A resulting device has low conduction resistance, RDS(on),max 1.4 superior switching performance and high avalance Qg,typ 20.7nC energy. Features Low RDS(on) Lo

Datasheet: LNH08R085 , LNH2N60 , LNH2N65 , LNH4N60 , LNH4N65 , LNH4N80 , LNH5N50 , LNH5N65B , CS150N03A8 , LNH7N65D , LNL04R075 , LNL04R120 , LNN04R040B , LNN04R050 , LNN04R075 , LNN06R062 , LNN06R140 .

History: AP4232AGM | HAT2087R | HM3205 | AP4957GM | AP4501AGEM-HF | OSG90R340KF | AUIRF7738L2

Keywords - LNH7N60D MOSFET datasheet

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