LNN04R040B PDF and Equivalents Search

 

LNN04R040B Specs and Replacement

Type Designator: LNN04R040B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 677 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: DFN5X6

LNN04R040B substitution

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LNN04R040B datasheet

 ..1. Size:761K  lonten
 lnn04r040b.pdf pdf_icon

LNN04R040B

LNN04R040B Lonten N-channel 40V, 80A, 4m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 4.0m GS technology. This advanced technology has been I 80A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy ... See More ⇒

 7.1. Size:956K  1
 lnn04r050.pdf pdf_icon

LNN04R040B

LNN04R050 Lonten N-channel 40V, 80A, 5.0m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 5.0m GS technology. This advanced technology has been I 80A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy... See More ⇒

 7.2. Size:936K  1
 lnn04r075.pdf pdf_icon

LNN04R040B

LNN04R075 Lonten N-channel 40V, 60A, 7.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 7.5m GS technology. This advanced technology has been I 60A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy... See More ⇒

 7.3. Size:956K  lonten
 lnn04r050.pdf pdf_icon

LNN04R040B

LNN04R050 Lonten N-channel 40V, 80A, 5.0m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 5.0m GS technology. This advanced technology has been I 80A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy... See More ⇒

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Detailed specifications: LNH4N65, LNH4N80, LNH5N50, LNH5N65B, LNH7N60D, LNH7N65D, LNL04R075, LNL04R120, 2N60, LNN04R050, LNN04R075, LNN06R062, LNN06R140, LNND04R120, LNSA3400, LNSC2302, LNSC3400

Keywords - LNN04R040B MOSFET specs

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