All MOSFET. LNN04R040B Datasheet

 

LNN04R040B Datasheet and Replacement


   Type Designator: LNN04R040B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 677 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: DFN5X6
 

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LNN04R040B Datasheet (PDF)

 ..1. Size:761K  lonten
 lnn04r040b.pdf pdf_icon

LNN04R040B

LNN04R040BLonten N-channel 40V, 80A, 4m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 4.0mGStechnology. This advanced technology has been I 80ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy

 7.1. Size:956K  1
 lnn04r050.pdf pdf_icon

LNN04R040B

LNN04R050Lonten N-channel 40V, 80A, 5.0m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 5.0mGStechnology. This advanced technology has been I 80ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy

 7.2. Size:936K  1
 lnn04r075.pdf pdf_icon

LNN04R040B

LNN04R075Lonten N-channel 40V, 60A, 7.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 7.5mGStechnology. This advanced technology has been I 60ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy

 7.3. Size:956K  lonten
 lnn04r050.pdf pdf_icon

LNN04R040B

LNN04R050Lonten N-channel 40V, 80A, 5.0m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 5.0mGStechnology. This advanced technology has been I 80ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy

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Datasheet: LNH4N65 , LNH4N80 , LNH5N50 , LNH5N65B , LNH7N60D , LNH7N65D , LNL04R075 , LNL04R120 , IRF830 , LNN04R050 , LNN04R075 , LNN06R062 , LNN06R140 , LNND04R120 , LNSA3400 , LNSC2302 , LNSC3400 .

History: TPCJ2102 | UPA1764G | VBA4311 | AOU3N50 | STD5NK50ZT4 | SSM3K15FV | 6N60KG-TA3-T

Keywords - LNN04R040B MOSFET datasheet

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