LNN04R040B MOSFET. Datasheet pdf. Equivalent

   Type Designator: LNN04R040B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 139 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 677 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: DFN5X6

LNN04R040B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

LNN04R040B Datasheet (PDF)

..1. Size:761K lonten
lnn04r040b.pdf

LNN04R040BLonten N-channel 40V, 80A, 4m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 4.0mGStechnology. This advanced technology has been I 80ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy

7.1. Size:956K 1
lnn04r050.pdf

LNN04R050Lonten N-channel 40V, 80A, 5.0m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 5.0mGStechnology. This advanced technology has been I 80ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy

7.2. Size:936K 1
lnn04r075.pdf

LNN04R075Lonten N-channel 40V, 60A, 7.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 7.5mGStechnology. This advanced technology has been I 60ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy

7.3. Size:956K lonten
lnn04r050.pdf