LNN04R040B MOSFET. Datasheet pdf. Equivalent

   Type Designator: LNN04R040B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 139 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 677 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: DFN5X6

LNN04R040B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS