LSB55R050GT MOSFET Datasheet: N-Ch, 550V, 60A. Full specification with pinout and replacement list

LSB55R050GT Specs and Replacement

Type Designator: LSB55R050GT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 290 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 71 nS

Cossⓘ - Output Capacitance: 193 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: TO-247

LSB55R050GT substitution

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LSB55R050GT datasheet

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LSB55R050GT LonFET Lonten N-channel 550V, 60A, 0.05 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 600V DS j,max advanced super junction technology. The resulting R 0.05 DS(on),max device has extremely low on resistance, making it I 180 A DM especially suitable for applications which require Q 84nC g,typ superior power density a... See More ⇒

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LSB55R066GT/LSD55R066GT/LSE55R066GT LonFET Lonten N-channel 550V, 45A, 0.066 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 600V advanced super junction technology. The resulting RDS(on),max 0.066 device has extremely low on resistance, making it IDM 135A especially suitable for applications which require Qg,typ 63.5 n... See More ⇒

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LSB55R140GT/LSD55R140GT/LSE55R140GT/ LSF55R140GT/LSC55R140GT LonFET Lonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 600V DS j,max advanced super junction technology. The resulting R 0.14 DS(on),max device has extremely low on resistance, making it I 69A DM especially suitable for applications which... See More ⇒

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LSB55R140GF/LSC55R140GF/LSD55R140GF/ LSE55R140GF/LSF55R140GF LonFET Lonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 600V DS j,max advanced super junction technology. The resulting R 0.14 DS(on),max device has extremely low on resistance, making it I 69A DM especially suitable for applications which... See More ⇒