LSB55R050GT Datasheet and Replacement
Type Designator: LSB55R050GT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 290 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 71 nS
Cossⓘ - Output Capacitance: 193 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO-247
LSB55R050GT substitution
LSB55R050GT Datasheet (PDF)
lsb55r050gt.pdf

LSB55R050GTLonFETLonten N-channel 550V, 60A, 0.05 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.05DS(on),maxdevice has extremely low on resistance, making it I 180 ADMespecially suitable for applications which require Q 84nCg,typsuperior power density a
lsb55r066gt lsd55r066gt lse55r066gt.pdf

LSB55R066GT/LSD55R066GT/LSE55R066GT LonFET Lonten N-channel 550V, 45A, 0.066 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 600V advanced super junction technology. The resulting RDS(on),max 0.066 device has extremely low on resistance, making it IDM 135A especially suitable for applications which require Qg,typ 63.5 n
lsb55r140gt lsd55r140gt lse55r140gt lsf55r140gt lsc55r140gt.pdf

LSB55R140GT/LSD55R140GT/LSE55R140GT/LSF55R140GT/LSC55R140GTLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which
lsb55r140gf lsc55r140gf lsd55r140gf lse55r140gf lsf55r140gf.pdf

LSB55R140GF/LSC55R140GF/LSD55R140GF/LSE55R140GF/LSF55R140GFLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which
Datasheet: LNSC3400 , LNU2N65 , LPL4459 , LPSA3481 , LPSA3487 , LPSC2301 , LPSC3481 , LPSC3487 , IRF9640 , LSB55R066GT , LSB55R140GF , LSB55R140GT , LSB60R030HT , LSB60R039GT , LSB60R066GT , LSB60R070HT , LSB60R092GF .
History: 2SK1446
Keywords - LSB55R050GT MOSFET datasheet
LSB55R050GT cross reference
LSB55R050GT equivalent finder
LSB55R050GT lookup
LSB55R050GT substitution
LSB55R050GT replacement
History: 2SK1446



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