All MOSFET. LSB55R140GT Datasheet

 

LSB55R140GT MOSFET. Datasheet pdf. Equivalent


   Type Designator: LSB55R140GT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 205 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 23 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 40 nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 76.2 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: TO-247

 LSB55R140GT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LSB55R140GT Datasheet (PDF)

 ..1. Size:1326K  lonten
lsb55r140gt lsd55r140gt lse55r140gt lsf55r140gt lsc55r140gt.pdf

LSB55R140GT
LSB55R140GT

LSB55R140GT/LSD55R140GT/LSE55R140GT/LSF55R140GT/LSC55R140GTLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which

 ..2. Size:1268K  lonten
lsb55r140gt lsd55r140gt lse55r140gt lsf55r140gt.pdf

LSB55R140GT
LSB55R140GT

LSB55R140GT/LSD55R140GT/LSE55R140GT/LSF55R140GTLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which require Q 40n

 4.1. Size:1326K  lonten
lsb55r140gf lsc55r140gf lsd55r140gf lse55r140gf lsf55r140gf.pdf

LSB55R140GT
LSB55R140GT

LSB55R140GF/LSC55R140GF/LSD55R140GF/LSE55R140GF/LSF55R140GFLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which

 4.2. Size:1193K  lonten
lsb55r140gf lsd55r140gf lse55r140gf.pdf

LSB55R140GT
LSB55R140GT

LSB55R140GF/LSD55R140GF/LSE55R140GFLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which require Q 40nCg,typsu

 8.1. Size:924K  lonten
lsb55r066gt lsd55r066gt lse55r066gt.pdf

LSB55R140GT
LSB55R140GT

LSB55R066GT/LSD55R066GT/LSE55R066GT LonFET Lonten N-channel 550V, 45A, 0.066 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 600V advanced super junction technology. The resulting RDS(on),max 0.066 device has extremely low on resistance, making it IDM 135A especially suitable for applications which require Qg,typ 63.5 n

 8.2. Size:849K  lonten
lsb55r050gt.pdf

LSB55R140GT
LSB55R140GT

LSB55R050GTLonFETLonten N-channel 550V, 60A, 0.05 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.05DS(on),maxdevice has extremely low on resistance, making it I 180 ADMespecially suitable for applications which require Q 84nCg,typsuperior power density a

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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