LSB60R030HT Specs and Replacement
Type Designator: LSB60R030HT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 610 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 107 nS
Cossⓘ - Output Capacitance: 311 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO-247
LSB60R030HT substitution
- MOSFET ⓘ Cross-Reference Search
LSB60R030HT datasheet
lsb60r030ht.pdf
LSB60R030HT LonFET Lonten N-channel 600V, 100A, 0.030 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 650V DS j,max advanced super junction technology. The resulting R 0.030 DS(on),max device has extremely low on resistance, making it I 300A DM especially suitable for applications which require Q 138nC g,typ superior power densit... See More ⇒
lsb60r039gt.pdf
LSB60R039GT LonFET Lonten N-channel 600V, 80A, 0.039 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.039 device has extremely low on resistance, making it IDM 240A especially suitable for applications which require Qg,typ 110nC superior power density... See More ⇒
lsb60r092gf lsd60r092gf lse60r092gf.pdf
LSB60R092GF/LSD60R092GF/LSE60R092GF LonFET Lonten N-channel 600V, 40A, 0.092 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.092 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC ... See More ⇒
lsb60r066gt.pdf
LSB60R066GT LonFET Lonten N-channel 600V, 54A, 0.066 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.066 device has extremely low on resistance, making it IDM 135A especially suitable for applications which require Qg,typ 87nC superior power density... See More ⇒
Detailed specifications: LPSA3487, LPSC2301, LPSC3481, LPSC3487, LSB55R050GT, LSB55R066GT, LSB55R140GF, LSB55R140GT, AOD4184A, LSB60R039GT, LSB60R066GT, LSB60R070HT, LSB60R092GF, LSB60R092GT, LSB60R099HT, LSB60R105HF, LSB60R125HT
Keywords - LSB60R030HT MOSFET specs
LSB60R030HT cross reference
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LSB60R030HT pdf lookup
LSB60R030HT substitution
LSB60R030HT replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SI7900AEDN | IPI180N10N3
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