LSB60R092GF MOSFET Datasheet: N-Ch, 600V, 40A. Full specification with pinout and replacement list

LSB60R092GF Specs and Replacement

Type Designator: LSB60R092GF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 278 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 43.8 nS

Cossⓘ - Output Capacitance: 2500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.092 Ohm

Package: TO-247

LSB60R092GF substitution

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LSB60R092GF datasheet

..1. Size:934K lonten
lsb60r092gf lsd60r092gf lse60r092gf.pdf pdf_icon

LSB60R092GF/LSD60R092GF/LSE60R092GF LonFET Lonten N-channel 600V, 40A, 0.092 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.092 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC ... See More ⇒

4.1. Size:941K lonten
lsb60r092gt lsd60r092gt lse60r092gt.pdf pdf_icon

LSB60R092GT/LSD60R092GT/LSE60R092GT LonFET Lonten N-channel 600V, 40A, 0.092 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.092 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC ... See More ⇒

6.1. Size:1047K lonten
lsb60r099ht lsd60r099ht lse60r099ht.pdf pdf_icon

LSB60R099HT/LSD60R099HT/LSE60R099HT LonFET Lonten N-channel 600V, 40A, 0.099 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 650V DS j,max advanced super junction technology. The resulting R 0.099 DS(on),max device has extremely low on resistance, making it I 120A DM especially suitable for applications which require Q 48nC g,typ ... See More ⇒

7.1. Size:993K lonten
lsb60r066gt.pdf pdf_icon

LSB60R066GT LonFET Lonten N-channel 600V, 54A, 0.066 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.066 device has extremely low on resistance, making it IDM 135A especially suitable for applications which require Qg,typ 87nC superior power density... See More ⇒