LSB60R099HT Specs and Replacement
Type Designator: LSB60R099HT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 248 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 106 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
Package: TO-247
LSB60R099HT substitution
- MOSFET ⓘ Cross-Reference Search
LSB60R099HT datasheet
lsb60r099ht lsd60r099ht lse60r099ht.pdf
LSB60R099HT/LSD60R099HT/LSE60R099HT LonFET Lonten N-channel 600V, 40A, 0.099 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 650V DS j,max advanced super junction technology. The resulting R 0.099 DS(on),max device has extremely low on resistance, making it I 120A DM especially suitable for applications which require Q 48nC g,typ ... See More ⇒
lsb60r092gf lsd60r092gf lse60r092gf.pdf
LSB60R092GF/LSD60R092GF/LSE60R092GF LonFET Lonten N-channel 600V, 40A, 0.092 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.092 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC ... See More ⇒
lsb60r092gt lsd60r092gt lse60r092gt.pdf
LSB60R092GT/LSD60R092GT/LSE60R092GT LonFET Lonten N-channel 600V, 40A, 0.092 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.092 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC ... See More ⇒
lsb60r066gt.pdf
LSB60R066GT LonFET Lonten N-channel 600V, 54A, 0.066 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.066 device has extremely low on resistance, making it IDM 135A especially suitable for applications which require Qg,typ 87nC superior power density... See More ⇒
Detailed specifications: LSB55R140GF, LSB55R140GT, LSB60R030HT, LSB60R039GT, LSB60R066GT, LSB60R070HT, LSB60R092GF, LSB60R092GT, IRFZ44N, LSB60R105HF, LSB60R125HT, LSB60R170GF, LSB60R170GT, LSB60R180HT, LSB60R280HT, LSB65R041GF, LSB65R041GT
Keywords - LSB60R099HT MOSFET specs
LSB60R099HT cross reference
LSB60R099HT equivalent finder
LSB60R099HT pdf lookup
LSB60R099HT substitution
LSB60R099HT replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: KHB4D0N80F2 | FDMS7656AS | IPI076N12N3 | SI2319CDS-T1-GE3
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