LSB60R125HT MOSFET Datasheet: N-Ch, 600V, 25A. Full specification with pinout and replacement list

LSB60R125HT Specs and Replacement

Type Designator: LSB60R125HT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 216 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46 nS

Cossⓘ - Output Capacitance: 370 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: TO-247

LSB60R125HT substitution

- MOSFET ⓘ Cross-Reference Search

LSB60R125HT datasheet

..1. Size:987K lonten
lsb60r125ht lsc60r125ht lsd60r125ht lse60r125ht.pdf pdf_icon

LSB60R125HT/LSC60R125HT/LSD60R125HT/LSE60R125HT LonFET Lonten N-channel 600V, 25A, 0.125 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.125 device has extremely low on resistance, making it IDM 75A especially suitable for applications which require Qg... See More ⇒

7.1. Size:1094K lonten
lsb60r105hf lsd60r105hf lse60r105hf lsc60r105hf.pdf pdf_icon

LSB60R105HF/LSD60R105HF/ LSE60R105HF/LSC60R105HF LonFET Lonten N-channel 600V, 40A, 0.105 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 650V DS j,max advanced super junction technology. The resulting R 0.105 DS(on),max device has extremely low on resistance, making it I 120A DM especially suitable for applications which require ... See More ⇒

7.2. Size:1125K lonten
lsb60r180ht lsc60r180ht lsd60r180ht lse60r180ht lsf60r180ht lsnc60r180ht.pdf pdf_icon

LSB60R180HT/ LSC60R180HT/ LSD60R180HT / LSE60R180HT/ LSF60R180HT/LSNC60R180HT LonFET Lonten N-channel 600V, 20A, 0.18 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated VDS @ Tj,max 650V using advanced super junction technology. RDS(on),max 0.18 The resulting device has extremely low on IDM 60A resistance, making it especially suitable fo... See More ⇒

7.3. Size:996K lonten
lsb60r170gt lsd60r170gt.pdf pdf_icon

LSB60R170GT/ LSD60R170GT LonFET Lonten N-channel 600V, 20A, 0.17 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.17 device has extremely low on resistance, making it IDM 60A especially suitable for applications which require Qg,typ 39nC superior pow... See More ⇒