All MOSFET. LSB60R125HT Datasheet

 

LSB60R125HT Datasheet and Replacement


   Type Designator: LSB60R125HT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 216 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: TO-247
 

 LSB60R125HT substitution

   - MOSFET ⓘ Cross-Reference Search

 

LSB60R125HT Datasheet (PDF)

 ..1. Size:987K  lonten
 lsb60r125ht lsc60r125ht lsd60r125ht lse60r125ht.pdf pdf_icon

LSB60R125HT

LSB60R125HT/LSC60R125HT/LSD60R125HT/LSE60R125HT LonFET Lonten N-channel 600V, 25A, 0.125 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.125 device has extremely low on resistance, making it IDM 75A especially suitable for applications which require Qg

 7.1. Size:1094K  lonten
 lsb60r105hf lsd60r105hf lse60r105hf lsc60r105hf.pdf pdf_icon

LSB60R125HT

LSB60R105HF/LSD60R105HF/LSE60R105HF/LSC60R105HFLonFETLonten N-channel 600V, 40A, 0.105 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.105DS(on),maxdevice has extremely low on resistance, making it I 120ADMespecially suitable for applications which require

 7.2. Size:1125K  lonten
 lsb60r180ht lsc60r180ht lsd60r180ht lse60r180ht lsf60r180ht lsnc60r180ht.pdf pdf_icon

LSB60R125HT

LSB60R180HT/ LSC60R180HT/ LSD60R180HT / LSE60R180HT/ LSF60R180HT/LSNC60R180HT LonFET Lonten N-channel 600V, 20A, 0.18 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated VDS @ Tj,max 650V using advanced super junction technology. RDS(on),max 0.18 The resulting device has extremely low on IDM 60A resistance, making it especially suitable fo

 7.3. Size:996K  lonten
 lsb60r170gt lsd60r170gt.pdf pdf_icon

LSB60R125HT

LSB60R170GT/ LSD60R170GT LonFET Lonten N-channel 600V, 20A, 0.17 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.17 device has extremely low on resistance, making it IDM 60A especially suitable for applications which require Qg,typ 39nC superior pow

SHOW MORE

Datasheet: LSB60R030HT , LSB60R039GT , LSB60R066GT , LSB60R070HT , LSB60R092GF , LSB60R092GT , LSB60R099HT , LSB60R105HF , IRF740 , LSB60R170GF , LSB60R170GT , LSB60R180HT , LSB60R280HT , LSB65R041GF , LSB65R041GT , LSB65R070GF , LSB65R099GF .

History: CEB6086 | AP60WN2K3H | CSD25302Q2

Keywords - LSB60R125HT MOSFET datasheet

 LSB60R125HT cross reference
 LSB60R125HT equivalent finder
 LSB60R125HT lookup
 LSB60R125HT substitution
 LSB60R125HT replacement

 

 
Back to Top

 


 
.