LSB65R180GT Datasheet and Replacement
Type Designator: LSB65R180GT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 205 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 68.6 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO-247
- MOSFET Cross-Reference Search
LSB65R180GT Datasheet (PDF)
lsb65r180gt lsc65r180gt lsd65r180gt lse65r180gt lsf65r180gt.pdf

LSB65R180GT/ LSC65R180GT/ LSD65R180GT/ LSE65R180GT/ LSF65R180GTLonFETLonten N-channel 650V, 20A, 0.18 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated V @ T 700VDS j,maxusing advanced super junction technology. RDS(on),max 0.18I 60AThe resulting device has extremely low on DMQ 39nCresistance, making it especially suitable for g,typapp
lsb65r180gf lsc65r180gf lsd65r180gf lse65r180gf lsf65r180gf.pdf

LSB65R180GF/ LSC65R180GF/ LSD65R180GF/ LSE65R180GF/ LSF65R180GFLonFETLonten N-channel 650V, 20A, 0.18 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated V @ T 700VDS j,maxusing advanced super junction technology. R 0.18DS(on),maxThe resulting device has extremely low on I 60ADMresistance, making it especially suitable for Q 39nCg,typa
lsb65r180ht lsc65r180ht lsd65r180ht lse65r180ht lsf65r180ht lsnc65r180ht.pdf

LSB65R180HT/ LSC65R180HT/ LSD65R180HT/ LSE65R180HT/ LSF65R180HT/LSNC65R180HTLonFETLonten N-channel 650V, 20A, 0.18 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated V @ T 700VDS j,maxusing advanced super junction technology. R 0.18DS(on),maxThe resulting device has extremely low on I 60ADMresistance, making it especially suitable for Q
lsb65r125ht lsc65r125ht lsd65r125ht lse65r125ht lsnc65r125ht lsf65r125ht.pdf

LSB65R125HT/LSC65R125HT/LSD65R125HT/LSE65R125HT/LSNC65R125HT/LSF65R125HTLonFETLonten N-channel 650V, 25A, 0.125 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.125DS(on),maxdevice has extremely low on resistance, making it I 75ADMespecially suitable for app
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IRFM064 | 2SK3270-01 | MMBFJ309L | IXTY2N100P | DAMI360N150 | 19MT050XF | IXTH40N50L2
Keywords - LSB65R180GT MOSFET datasheet
LSB65R180GT cross reference
LSB65R180GT equivalent finder
LSB65R180GT lookup
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LSB65R180GT replacement
History: IRFM064 | 2SK3270-01 | MMBFJ309L | IXTY2N100P | DAMI360N150 | 19MT050XF | IXTH40N50L2



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