LSC60R280HT Datasheet and Replacement
Type Designator: LSC60R280HT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 56 nS
Cossⓘ - Output Capacitance: 41.8 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO-220
LSC60R280HT substitution
LSC60R280HT Datasheet (PDF)
lsd60r280ht lsg60r280ht lsh60r280ht lsb60r280ht lsf60r280ht lse60r280ht lsc60r280ht.pdf

LSD60R280HT/LSG60R280HT/LSH60R280HT/LSB60R280HTLSF60R280HT/ LSE60R280HT/ LSC60R280HTLonFETLonten N-channel 600V, 15A, 0.28 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.28DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitab
lsd60r290hf lsg60r290hf lsh60r290hf lsc60r290hf lsf60r290hf lse60r290hf.pdf

LSD60R290HF/LSG60R290HF/LSH60R290HF//LSC60R290HFLSF60R290HF/ LSE60R290HFLonFETLonten N-channel 600V, 15A, 0.29 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.29DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitable for appli
lsb60r105hf lsd60r105hf lse60r105hf lsc60r105hf.pdf

LSB60R105HF/LSD60R105HF/LSE60R105HF/LSC60R105HFLonFETLonten N-channel 600V, 40A, 0.105 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.105DS(on),maxdevice has extremely low on resistance, making it I 120ADMespecially suitable for applications which require
lsb60r125ht lsc60r125ht lsd60r125ht lse60r125ht.pdf

LSB60R125HT/LSC60R125HT/LSD60R125HT/LSE60R125HT LonFET Lonten N-channel 600V, 25A, 0.125 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.125 device has extremely low on resistance, making it IDM 75A especially suitable for applications which require Qg
Datasheet: LSB65R180HT , LSB65R380HT , LSB80R350GT , LSC55R140GF , LSC55R140GT , LSC60R105HF , LSC60R125HT , LSC60R180HT , 2SK3878 , LSC60R290HF , LSC60R650HT , LSC65R125HT , LSC65R180GF , LSC65R180GT , LSC65R180HT , LSC65R280HT , LSC65R290HF .
History: LSC60R125HT
Keywords - LSC60R280HT MOSFET datasheet
LSC60R280HT cross reference
LSC60R280HT equivalent finder
LSC60R280HT lookup
LSC60R280HT substitution
LSC60R280HT replacement
History: LSC60R125HT



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