All MOSFET. STP19N06LFI Datasheet

 

STP19N06LFI Datasheet and Replacement


   Type Designator: STP19N06LFI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 18 nC
   tr ⓘ - Rise Time: 165 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: ISOWATT220
 

 STP19N06LFI substitution

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STP19N06LFI Datasheet (PDF)

 5.1. Size:142K  st
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STP19N06LFI

STP19N06LSTP19N06LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP19N06L 60 V

 6.1. Size:194K  st
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STP19N06LFI

STP19N06STP19N06FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP19N06 60 V

 6.2. Size:387K  st
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STP19N06LFI

STP19N06STP19N06FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP19N06 60 V

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Datasheet: STP15N05LFI , STP15N06L , STP15N06LFI , STP18N10 , STP18N10FI , STP19N06 , STP19N06FI , STP19N06L , TK10A60D , STP20N06 , STP20N06FI , STP20N10 , STP20N10FI , STP20N10L , STP20N10LFI , STP21N05L , STP21N05LFI .

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