All MOSFET. LSD60R170GF Datasheet

 

LSD60R170GF MOSFET. Datasheet pdf. Equivalent


   Type Designator: LSD60R170GF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 39 nC
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 1250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: TO-220F

 LSD60R170GF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LSD60R170GF Datasheet (PDF)

 ..1. Size:998K  lonten
 lsb60r170gf lsd60r170gf.pdf

LSD60R170GF LSD60R170GF

LSB60R170GF/ LSD60R170GF LonFET Lonten N-channel 600V, 20A, 0.17 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated VDS @ Tj,max 650V using advanced super junction technology. RDS(on),max 0.17 The resulting device has extremely low on IDM 60A resistance, making it especially suitable for Qg,typ 39nC applications which require superior powe

 4.1. Size:996K  lonten
 lsb60r170gt lsd60r170gt.pdf

LSD60R170GF LSD60R170GF

LSB60R170GT/ LSD60R170GT LonFET Lonten N-channel 600V, 20A, 0.17 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.17 device has extremely low on resistance, making it IDM 60A especially suitable for applications which require Qg,typ 39nC superior pow

 7.1. Size:1094K  lonten
 lsb60r105hf lsd60r105hf lse60r105hf lsc60r105hf.pdf

LSD60R170GF LSD60R170GF

LSB60R105HF/LSD60R105HF/LSE60R105HF/LSC60R105HFLonFETLonten N-channel 600V, 40A, 0.105 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.105DS(on),maxdevice has extremely low on resistance, making it I 120ADMespecially suitable for applications which require

 7.2. Size:987K  lonten
 lsb60r125ht lsc60r125ht lsd60r125ht lse60r125ht.pdf

LSD60R170GF LSD60R170GF

LSB60R125HT/LSC60R125HT/LSD60R125HT/LSE60R125HT LonFET Lonten N-channel 600V, 25A, 0.125 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.125 device has extremely low on resistance, making it IDM 75A especially suitable for applications which require Qg

 7.3. Size:1125K  lonten
 lsb60r180ht lsc60r180ht lsd60r180ht lse60r180ht lsf60r180ht lsnc60r180ht.pdf

LSD60R170GF LSD60R170GF

LSB60R180HT/ LSC60R180HT/ LSD60R180HT / LSE60R180HT/ LSF60R180HT/LSNC60R180HT LonFET Lonten N-channel 600V, 20A, 0.18 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated VDS @ Tj,max 650V using advanced super junction technology. RDS(on),max 0.18 The resulting device has extremely low on IDM 60A resistance, making it especially suitable fo

 7.4. Size:1103K  lonten
 lsd60r1k4ht lsg60r1k4ht lsh60r1k4ht lse60r1k4ht.pdf

LSD60R170GF LSD60R170GF

LSD60R1K4HT/LSG60R1K4HT/ LSH60R1K4HT/ LSE60R1K4HTLonFETLonten N-channel 600V, 3A, 1.4 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 1.4DS(on),maxdevice has extremely low on resistance, making it I 9ADMespecially suitable for applications which require Q 5.8nC

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: CMLDM8002AG | 2SK4143-S17-AY | 2SK549 | CMUDM7004 | AP10P500N | CMU5941

 

 
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