LSD60R170GT Specs and Replacement
Type Designator: LSD60R170GT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 1250 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
Package: TO-220F
LSD60R170GT substitution
- MOSFET ⓘ Cross-Reference Search
LSD60R170GT datasheet
lsb60r170gt lsd60r170gt.pdf
LSB60R170GT/ LSD60R170GT LonFET Lonten N-channel 600V, 20A, 0.17 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.17 device has extremely low on resistance, making it IDM 60A especially suitable for applications which require Qg,typ 39nC superior pow... See More ⇒
lsb60r170gf lsd60r170gf.pdf
LSB60R170GF/ LSD60R170GF LonFET Lonten N-channel 600V, 20A, 0.17 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated VDS @ Tj,max 650V using advanced super junction technology. RDS(on),max 0.17 The resulting device has extremely low on IDM 60A resistance, making it especially suitable for Qg,typ 39nC applications which require superior powe... See More ⇒
lsb60r105hf lsd60r105hf lse60r105hf lsc60r105hf.pdf
LSB60R105HF/LSD60R105HF/ LSE60R105HF/LSC60R105HF LonFET Lonten N-channel 600V, 40A, 0.105 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 650V DS j,max advanced super junction technology. The resulting R 0.105 DS(on),max device has extremely low on resistance, making it I 120A DM especially suitable for applications which require ... See More ⇒
lsb60r125ht lsc60r125ht lsd60r125ht lse60r125ht.pdf
LSB60R125HT/LSC60R125HT/LSD60R125HT/LSE60R125HT LonFET Lonten N-channel 600V, 25A, 0.125 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.125 device has extremely low on resistance, making it IDM 75A especially suitable for applications which require Qg... See More ⇒
Detailed specifications: LSD55R140GT, LSD60R070HT, LSD60R092GF, LSD60R092GT, LSD60R099HT, LSD60R105HF, LSD60R125HT, LSD60R170GF, AON7506, LSD60R180HT, LSD60R1K4HT, LSD60R240HT, LSD60R280HT, LSD60R290HF, LSD60R380HT, LSD60R650HT, LSD65R099GF
Keywords - LSD60R170GT MOSFET specs
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