LSD70R640GT Datasheet and Replacement
Type Designator: LSD70R640GT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 23 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.64 Ohm
Package: TO-220F
LSD70R640GT substitution
LSD70R640GT Datasheet (PDF)
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LSC70R640GT/LSD70R640GT/LSG70R640GT/ LSH70R640GT/LSF70R640GT LonFET Lonten N-channel 700V, 7A, 0.64 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 750V advanced super junction technology. The resulting RDS(on),max 0.64 device has extremely low on resistance, making it IDM 21A especially suitable for applications whic
lsc70r380gt lsd70r380gt lse70r380gt lsf70r380gt lsg70r380gt.pdf

LSC70R380GT/LSD70R380GT/LSE70R380GT/LSF70R380GT/LSG70R380GTLonFETLonten N-channel 700V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 750VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it I 30ADMespecially suitable for applications which
lsd70r1kgt lsg70r1kgt lsh70r1kgt.pdf

LSD70R1KGT/LSG70R1KGT/ LSH70R1KGT LonFET Lonten N-channel 700V, 4A, 1.08 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 750V advanced super junction technology. The RDS(on),max 1.08 resulting device has extremely low on IDM 12A resistance, making it especially suitable for Qg,typ 13nC applications which require super
lsd70r450gt lse70r450gt lsf70r450gt lsg70r450gt lsh70r450gt.pdf

LSD70R450GT/LSE70R450GT/LSF70R450GT/LSG70R450GT/LSH70R450GT LonFET Lonten N-channel 700V, 11A, 0.45 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 750V advanced super junction technology. The RDS(on),max 0.45 resulting device has extremely low on resistance, IDM 30A making it especially suitable for applications which
Datasheet: LSD65R380GT , LSD65R380HT , LSD65R570GT , LSD65R650HT , LSD65R930GT , LSD70R1KGT , LSD70R380GT , LSD70R450GT , IRFZ48N , LSD80R2K8GT , LSD80R350GT , LSD80R680GT , LSD80R980GT , LSDN55R140GT , LSDN60R950HT , LSDN65R380GT , LSDN65R380HT .
History: OSG60R2K2ASF | HGD290N10SL | HGD195N15S | NTMFS4C025N | QS8K13 | ME6600D-G | MTW32N20EG
Keywords - LSD70R640GT MOSFET datasheet
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History: OSG60R2K2ASF | HGD290N10SL | HGD195N15S | NTMFS4C025N | QS8K13 | ME6600D-G | MTW32N20EG



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