LSD80R980GT Datasheet and Replacement
Type Designator: LSD80R980GT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 29 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 20 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.98 Ohm
Package: TO-220F
LSD80R980GT substitution
LSD80R980GT Datasheet (PDF)
lsc80r980gt lsd80r980gt lse80r980gt lsf80r980gt lsg80r980gt lsh80r980gt.pdf

LSC80R980GT/LSD80R980GT/LSE80R980GT/LSF80R980GT/LSG80R980GT/LSH80R980GTLonFETLonten N-channel 800V, 5A, 0.98 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 850VDS j,maxadvanced super junction technology. The resulting R 0.98DS(on),maxdevice has extremely low on resistance, making it I 5ADMespecially suitable for applicat
lsc80r680gt lsd80r680gt lse80r680gt lsf80r680gt lsg80r680gt lsh80r680gt.pdf

LSC80R680GT/LSD80R680GT/LSE80R680GT/LSF80R680GT/LSG80R680GT/LSH80R680GTLonFETLonten N-channel 800V, 8A, 0.68 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 850VDS j,maxadvanced super junction technology. The resulting R 0.68DS(on),maxdevice has extremely low on resistance, making it I 8ADMespecially suitable for applicat
lsd80r2k8gt.pdf

LSD80R2K8GTLonFETLonten N-channel 800V, 2A, 2.8 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 850VDS j,maxadvanced super junction technology. The resulting R 2.8DS(on),maxdevice has extremely low on resistance, making it I 5ADMespecially suitable for applications which require Q 7.7nCg,typsuperior power density and ou
lsb80r350gt lsc80r350gt lsd80r350gt lse80r350gt lsf80r350gt.pdf

LSB80R350GT /LSC80R350GT/LSD80R350GT/LSE80R350GT/LSF80R350GTLonFETLonten N-channel 800V, 15A, 0.35 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 850VDS j,maxadvanced super junction technology. The R 0.35DS(on),maxresulting device has extremely low on resistance, I 45ADMmaking it especially suitable for applications which
Datasheet: LSD65R930GT , LSD70R1KGT , LSD70R380GT , LSD70R450GT , LSD70R640GT , LSD80R2K8GT , LSD80R350GT , LSD80R680GT , STP65NF06 , LSDN55R140GT , LSDN60R950HT , LSDN65R380GT , LSDN65R380HT , LSDN65R650HT , LSDN65R950HT , LSE50R160HT , LSE55R066GT .
History: NCE70N380F | ELM32418LA | AON6410 | TPCA8027-H | 2N7002F | SSF2610E | BUZ73AH
Keywords - LSD80R980GT MOSFET datasheet
LSD80R980GT cross reference
LSD80R980GT equivalent finder
LSD80R980GT lookup
LSD80R980GT substitution
LSD80R980GT replacement
History: NCE70N380F | ELM32418LA | AON6410 | TPCA8027-H | 2N7002F | SSF2610E | BUZ73AH



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