LSDN65R380HT MOSFET. Datasheet pdf. Equivalent
Type Designator: LSDN65R380HT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14.7 nC
trⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 36.1 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO-220F
LSDN65R380HT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LSDN65R380HT Datasheet (PDF)
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LSC65R380HT /LSD65R380HT / LSE65R380HT /LSF65R380HT/LSDN65R380HTLSH65R380HT/LSG65R380HT/LSNC65R380HT/LSN65R380HTLonFETLonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it
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LSC65R650HT/LSD65R650HT/ LSDN65R650HT/ LSE65R650HT/LSG65R650HT/LSH65R650HTLonFETLonten N-channel 650V, 7A, 0.65 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.65DS(on),maxdevice has extremely low on resistance, making it I 21ADMespecially suitable for appl
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