All MOSFET. LSE65R125HT Datasheet

 

LSE65R125HT MOSFET. Datasheet pdf. Equivalent


   Type Designator: LSE65R125HT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 216 W
   Maximum Drain-Source Voltage |Vds|: 650 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
   Maximum Drain Current |Id|: 25 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 36 nC
   Rise Time (tr): 46 nS
   Drain-Source Capacitance (Cd): 85.7 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.125 Ohm
   Package: TO-263

 LSE65R125HT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LSE65R125HT Datasheet (PDF)

 ..1. Size:1180K  lonten
lsb65r125ht lsc65r125ht lsd65r125ht lse65r125ht lsnc65r125ht lsf65r125ht.pdf

LSE65R125HT
LSE65R125HT

LSB65R125HT/LSC65R125HT/LSD65R125HT/LSE65R125HT/LSNC65R125HT/LSF65R125HTLonFETLonten N-channel 650V, 25A, 0.125 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.125DS(on),maxdevice has extremely low on resistance, making it I 75ADMespecially suitable for app

 7.1. Size:1188K  lonten
lsb65r180gf lsc65r180gf lsd65r180gf lse65r180gf lsf65r180gf.pdf

LSE65R125HT
LSE65R125HT

LSB65R180GF/ LSC65R180GF/ LSD65R180GF/ LSE65R180GF/ LSF65R180GFLonFETLonten N-channel 650V, 20A, 0.18 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated V @ T 700VDS j,maxusing advanced super junction technology. R 0.18DS(on),maxThe resulting device has extremely low on I 60ADMresistance, making it especially suitable for Q 39nCg,typa

 7.2. Size:1176K  lonten
lsd65r1k5ht lsg65r1k5ht lsh65r1k5ht lse65r1k5ht lss65r1k5ht.pdf

LSE65R125HT
LSE65R125HT

LSD65R1K5HT/LSG65R1K5HT/ LSH65R1K5HT/ LSE65R1K5HT/ LSS65R1K5HTLonFETLonten N-channel 650V, 3A, 1.5 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 1.5DS(on),maxdevice has extremely low on resistance, making it I 9ADMespecially suitable for applications which re

 7.3. Size:1136K  lonten
lsb65r180gt lsc65r180gt lsd65r180gt lse65r180gt lsf65r180gt.pdf

LSE65R125HT
LSE65R125HT

LSB65R180GT/ LSC65R180GT/ LSD65R180GT/ LSE65R180GT/ LSF65R180GTLonFETLonten N-channel 650V, 20A, 0.18 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated V @ T 700VDS j,maxusing advanced super junction technology. RDS(on),max 0.18I 60AThe resulting device has extremely low on DMQ 39nCresistance, making it especially suitable for g,typapp

 7.4. Size:1171K  lonten
lsb65r180ht lsc65r180ht lsd65r180ht lse65r180ht lsf65r180ht lsnc65r180ht.pdf

LSE65R125HT
LSE65R125HT

LSB65R180HT/ LSC65R180HT/ LSD65R180HT/ LSE65R180HT/ LSF65R180HT/LSNC65R180HTLonFETLonten N-channel 650V, 20A, 0.18 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated V @ T 700VDS j,maxusing advanced super junction technology. R 0.18DS(on),maxThe resulting device has extremely low on I 60ADMresistance, making it especially suitable for Q

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