LSE65R125HT Datasheet and Replacement
Type Designator: LSE65R125HT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 216 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 85.7 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: TO-263
LSE65R125HT substitution
LSE65R125HT Datasheet (PDF)
lsb65r125ht lsc65r125ht lsd65r125ht lse65r125ht lsnc65r125ht lsf65r125ht.pdf

LSB65R125HT/LSC65R125HT/LSD65R125HT/LSE65R125HT/LSNC65R125HT/LSF65R125HTLonFETLonten N-channel 650V, 25A, 0.125 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.125DS(on),maxdevice has extremely low on resistance, making it I 75ADMespecially suitable for app
lsb65r180gf lsc65r180gf lsd65r180gf lse65r180gf lsf65r180gf.pdf

LSB65R180GF/ LSC65R180GF/ LSD65R180GF/ LSE65R180GF/ LSF65R180GFLonFETLonten N-channel 650V, 20A, 0.18 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated V @ T 700VDS j,maxusing advanced super junction technology. R 0.18DS(on),maxThe resulting device has extremely low on I 60ADMresistance, making it especially suitable for Q 39nCg,typa
lsd65r1k5ht lsg65r1k5ht lsh65r1k5ht lse65r1k5ht lss65r1k5ht.pdf

LSD65R1K5HT/LSG65R1K5HT/ LSH65R1K5HT/ LSE65R1K5HT/ LSS65R1K5HTLonFETLonten N-channel 650V, 3A, 1.5 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 1.5DS(on),maxdevice has extremely low on resistance, making it I 9ADMespecially suitable for applications which re
lsb65r180gt lsc65r180gt lsd65r180gt lse65r180gt lsf65r180gt.pdf

LSB65R180GT/ LSC65R180GT/ LSD65R180GT/ LSE65R180GT/ LSF65R180GTLonFETLonten N-channel 650V, 20A, 0.18 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated V @ T 700VDS j,maxusing advanced super junction technology. RDS(on),max 0.18I 60AThe resulting device has extremely low on DMQ 39nCresistance, making it especially suitable for g,typapp
Datasheet: LSE60R180HT , LSE60R1K4HT , LSE60R240HT , LSE60R280HT , LSE60R290HF , LSE60R380HT , LSE65R099GF , LSE65R099GT , IRFP460 , LSE65R180GF , LSE65R180GT , LSE65R180HT , LSE65R1K5HT , LSE65R280HT , LSE65R290HF , LSE65R380GF , LSE65R380GT .
History: SI3499DV | IRFIZ34GPBF | 2N7002X | ZXMC3AMC | NTZS3151PT1G | LSE65R180GF
Keywords - LSE65R125HT MOSFET datasheet
LSE65R125HT cross reference
LSE65R125HT equivalent finder
LSE65R125HT lookup
LSE65R125HT substitution
LSE65R125HT replacement
History: SI3499DV | IRFIZ34GPBF | 2N7002X | ZXMC3AMC | NTZS3151PT1G | LSE65R180GF



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