All MOSFET. LSE65R380GF Datasheet

 

LSE65R380GF MOSFET. Datasheet pdf. Equivalent


   Type Designator: LSE65R380GF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22.8 nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 39 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO-263

 LSE65R380GF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LSE65R380GF Datasheet (PDF)

 ..1. Size:1360K  lonten
 lsc65r380gf lsd65r380gf lse65r380gf lsf65r380gf lsg65r380gf.pdf

LSE65R380GF LSE65R380GF

LSC65R380GF/LSD65R380GF/LSE65R380GF/LSF65R380GF/LSG65R380GFLonFETLonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it I 30ADMespecially suitable for applications which

 4.1. Size:1357K  lonten
 lsc65r380gt lsd65r380gt lse65r380gt lsf65r380gt lsg65r380gt.pdf

LSE65R380GF LSE65R380GF

LSC65R380GT/LSD65R380GT/LSE65R380GT/LSF65R380GT/LSG65R380GTLonFETLonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it I 30ADMespecially suitable for applications which

 4.2. Size:1444K  lonten
 lsc65r380gt lsd65r380gt lsh65r380gt lse65r380gt lsf65r380gt lsg65r380gt.pdf

LSE65R380GF LSE65R380GF

LSC65R380GT/LSD65R380GT/LSH65R380GT/LSE65R380GT/LSF65R380GT/LSG65R380GTLonFETLonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it I 30ADMespecially suitable for applic

 5.1. Size:1512K  lonten
 lsc65r380ht lsd65r380ht lse65r380ht lsf65r380ht lsdn65r380ht lsh65r380ht lsg65r380ht lsnc65r380ht lsn65r380ht.pdf

LSE65R380GF LSE65R380GF

LSC65R380HT /LSD65R380HT / LSE65R380HT /LSF65R380HT/LSDN65R380HTLSH65R380HT/LSG65R380HT/LSNC65R380HT/LSN65R380HTLonFETLonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it

 5.2. Size:1176K  lonten
 lsc65r380ht lsd65r380ht lse65r380ht lsf65r380ht lsg65r380ht.pdf

LSE65R380GF LSE65R380GF

LSC65R380HT /LSD65R380HT / LSE65R380HT /LSF65R380HT/LSG65R380HT LonFET Lonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.38 device has extremely low on resistance, making it IDM 30A especially suitable for applications wh

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IXFB110N60P3

 

 
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