LSE65R380HT Datasheet and Replacement
Type Designator: LSE65R380HT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 216 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO-263
LSE65R380HT substitution
LSE65R380HT Datasheet (PDF)
lsc65r380ht lsd65r380ht lse65r380ht lsf65r380ht lsdn65r380ht lsh65r380ht lsg65r380ht lsnc65r380ht lsn65r380ht.pdf

LSC65R380HT /LSD65R380HT / LSE65R380HT /LSF65R380HT/LSDN65R380HTLSH65R380HT/LSG65R380HT/LSNC65R380HT/LSN65R380HTLonFETLonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it
lsc65r380ht lsd65r380ht lse65r380ht lsf65r380ht lsg65r380ht.pdf

LSC65R380HT /LSD65R380HT / LSE65R380HT /LSF65R380HT/LSG65R380HT LonFET Lonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.38 device has extremely low on resistance, making it IDM 30A especially suitable for applications wh
lsc65r380gt lsd65r380gt lse65r380gt lsf65r380gt lsg65r380gt.pdf

LSC65R380GT/LSD65R380GT/LSE65R380GT/LSF65R380GT/LSG65R380GTLonFETLonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it I 30ADMespecially suitable for applications which
lsc65r380gf lsd65r380gf lse65r380gf lsf65r380gf lsg65r380gf.pdf

LSC65R380GF/LSD65R380GF/LSE65R380GF/LSF65R380GF/LSG65R380GFLonFETLonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it I 30ADMespecially suitable for applications which
Datasheet: LSE65R180GF , LSE65R180GT , LSE65R180HT , LSE65R1K5HT , LSE65R280HT , LSE65R290HF , LSE65R380GF , LSE65R380GT , AON6414A , LSE65R570GT , LSE65R650HT , LSE70R380GT , LSE70R450GT , LSE80R350GT , LSE80R680GT , LSE80R980GT , LSF50R160HT .
History: SPE65R360G | 7NM70L-TF1-T | IXTH260N055T2 | UTT6NP10G-S08-R | SIA537EDJ | 2SK2294 | QM2N7002E3K1
Keywords - LSE65R380HT MOSFET datasheet
LSE65R380HT cross reference
LSE65R380HT equivalent finder
LSE65R380HT lookup
LSE65R380HT substitution
LSE65R380HT replacement
History: SPE65R360G | 7NM70L-TF1-T | IXTH260N055T2 | UTT6NP10G-S08-R | SIA537EDJ | 2SK2294 | QM2N7002E3K1



LIST
Last Update
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
c102 transistor | bt152 datasheet | 2sa1302 datasheet | mpsa13 transistor equivalent | кт817г характеристики | 2sc1972 | 2n5088 transistor equivalent | 2n5884