LSE80R350GT MOSFET. Datasheet pdf. Equivalent
Type Designator: LSE80R350GT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 39 nC
Rise Time (tr): 37 nS
Drain-Source Capacitance (Cd): 42 pF
Maximum Drain-Source On-State Resistance (Rds): 0.35 Ohm
Package: TO-263
LSE80R350GT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LSE80R350GT Datasheet (PDF)
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